Abstract The process-related surface state effect is investigated the fabrication of SiC devices, and a nonlinear model for 4H-SiC power metal-semiconductor field effect transistor (MESFET) is proposed, which takes into account the surface-related parameters. The frequency- and temperature- dependent transconductance dispersion is readily demonstrated in terms of the improved model. Simulation results show that larger dispersion and higher transition frequency occur in 4H-SiC MESFET than in GaAs MESFET. The advantage of this analytical model over the two-dimensional numerical simulation is the simplicity of calculations, therefore it is suitable for the processing improvement of SiC devices.
Received: 23 July 2002
Revised: 02 January 2003
Accepted manuscript online:
PACS:
85.30.Tv
(Field effect devices)
Fund: Project supported by the Advanced Research Foundation for National Defence of China (Grant No. 8.1.7.3).
Cite this article:
Yang Lin-An (杨林安), Yu Chun-Li (于春利), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) Low frequency effects of surface states on 4H-SiC metal-semiconductor field effect transistor 2003 Chinese Physics 12 389
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