Please wait a minute...
Chinese Physics, 2002, Vol. 11(3): 282-287    DOI: 10.1088/1009-1963/11/3/316
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Study on the in-plane electrical resistivity and thermoelectric power in single crystals of La2-xBaxCuO4

Li Peng-Cheng (李鹏程), Yang Hong-Shun (杨宏顺), Li Zhi-Quan (李志权), Chai Yi-Sheng (柴一晟), Cao Lie-Zhao (曹烈兆)
Structure Research Laboratory, Department of Physics, University of Science and Technology of China, Hefei 230026, China
Abstract  The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La2-xBaxCuO4 at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La1.48Nd0.4Sr0.12CuO4. The temperature dependence of electric resistivity below 70K is still well described by the formula $\rho \varpropto \ln T$. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.
Keywords:  resistivity      thermopower  
Received:  12 September 2001      Revised:  29 October 2001      Accepted manuscript online: 
PACS:  72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)  
  72.20.Pa (Thermoelectric and thermomagnetic effects)  
  72.15.Rn (Localization effects (Anderson or weak localization))  
  64.70.Kb  
Fund: Project supported by the Major State Basic Research Development Programme of China (Grant No 19990646).

Cite this article: 

Li Peng-Cheng (李鹏程), Yang Hong-Shun (杨宏顺), Li Zhi-Quan (李志权), Chai Yi-Sheng (柴一晟), Cao Lie-Zhao (曹烈兆) Study on the in-plane electrical resistivity and thermoelectric power in single crystals of La2-xBaxCuO4 2002 Chinese Physics 11 282

[1] Anisotropic superconducting properties of FeSe0.5Te0.5 single crystals
Jia-Ming Zhao(赵佳铭) and Zhi-He Wang(王智河). Chin. Phys. B, 2022, 31(9): 097402.
[2] Sign reversal of anisotropic magnetoresistance and anomalous thickness-dependent resistivity in Sr2CrWO6/SrTiO3 films
Chunli Yao(姚春丽), Tingna Shao(邵婷娜), Mingrui Liu(刘明睿), Zitao Zhang(张子涛), Weimin Jiang(姜伟民), Qiang Zhao(赵强), Yujie Qiao(乔宇杰), Meihui Chen(陈美慧), Xingyu Chen(陈星宇), Ruifen Dou(窦瑞芬), Changmin Xiong(熊昌民), and Jiacai Nie(聂家财). Chin. Phys. B, 2022, 31(10): 107302.
[3] Magnetic properties and resistivity of a 2:17-type SmCo magnet doped with ZrO2
Qi-Qi Yang(杨棋棋), Zhuang Liu(刘壮), Chao-Yue Zhang(张超越), Hai-Chen Wu(吴海辰), Xiao-Lei Gao(高晓磊), Yi-Long Ma(马毅龙), Ren-Jie Chen(陈仁杰), and A-Ru Yan(闫阿儒). Chin. Phys. B, 2021, 30(7): 077504.
[4] Suppression of ion migration in perovskite materials by pulse-voltage method
Xue-Yan Wang(王雪岩), Hu Wang(王虎), Luo-Ran Chen(陈烙然), Yu-Chuan Shao(邵宇川), and Jian-Da Shao(邵建达). Chin. Phys. B, 2021, 30(11): 118104.
[5] Growth and physical characterization of high resistivityFe: β-Ga2O3 crystals
Hao Zhang(张浩), Hui-Li Tang(唐慧丽), Nuo-Tian He(何诺天), Zhi-Chao Zhu(朱智超), Jia-Wen Chen(陈佳文), Bo Liu(刘波), Jun Xu(徐军). Chin. Phys. B, 2020, 29(8): 087201.
[6] Different behavior of upper critical field in Fe1-xSe single crystals
Shunli Ni(倪顺利), Wei Hu(胡卫), Peipei Shen(沈沛沛), Zhongxu Wei(魏忠旭), Shaobo Liu(刘少博), Dong Li(李栋), Jie Yuan(袁洁), Li Yu(俞理), Kui Jin(金魁), Fang Zhou(周放), Xiaoli Dong(董晓莉), Zhongxian Zhao(赵忠贤). Chin. Phys. B, 2019, 28(12): 127401.
[7] Enhanced spin-dependent thermopower in a double-quantum-dot sandwiched between two-dimensional electron gases
Feng Chi(迟锋), Zhen-Guo Fu(付振国), Liming Liu(刘黎明), Ping Zhang(张平). Chin. Phys. B, 2019, 28(10): 107305.
[8] Nonlinear uniaxial pressure dependence of the resistivity in Sr1-xBaxFe1.97Ni0.03As2
Hui-Can Mao(毛慧灿), Dong-Liang Gong(龚冬良), Xiao-Yan Ma(马肖燕), Hui-Qian Luo(罗会仟), Yi-Feng Yang(杨义峰), Lei Shan(单磊), Shi-Liang Li(李世亮). Chin. Phys. B, 2018, 27(8): 087402.
[9] General equation describing viscosity of metallic melts under horizontal magnetic field
Yipeng Xu(许亦鹏), Xiaolin Zhao(赵晓林), Tingliang Yan(颜廷亮). Chin. Phys. B, 2017, 26(3): 036601.
[10] Impact of coupling geometry on thermoelectric properties of oligophenyl-base transistor
S Ramezani Akbarabadi, H Rahimpour Soleimani, M Bagheri Tagani, Z Golsanamlou. Chin. Phys. B, 2017, 26(2): 027303.
[11] Improvement of the thermoelectric efficiency of pyrene-based molecular junction with doping engineering
Mohammad Farid Jamali, Meysam Bagheri Tagani, Hamid Rahimpour Soleimani. Chin. Phys. B, 2017, 26(12): 123101.
[12] Structural, optical, and electrical properties of Cu-doped ZrO2 films prepared by magnetron co-sputtering
Nian-Qi Yao(姚念琦), Zhi-Chao Liu(刘智超), Guang-Rui Gu(顾广瑞), Bao-Jia Wu(吴宝嘉). Chin. Phys. B, 2017, 26(10): 106801.
[13] Magnetoresistivity and filamentary superconductivity in nickel-doped BaFe2As2
Wei Zhang(张威), Yao-Min Dai(戴耀民), Bing Xu(许兵), Run Yang(杨润), Jin-Yun Liu(刘金云), Qiang-Tao Sui(随强涛), Hui-Qian Luo(罗会仟), Rui Zhang(张睿), Xing-Ye Lu(鲁兴业), Hao Yang(杨浩), Xiang-Gang Qiu(邱祥冈). Chin. Phys. B, 2016, 25(4): 047401.
[14] Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films
Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ling-Cong Le(乐伶聪), Xiao-Jing Li(李晓静), Xiao-Guang He(何晓光), Li-Qun Zhang(张立群), Hui Yang(杨辉). Chin. Phys. B, 2016, 25(2): 027102.
[15] Low-temperature physical properties and electronic structures of Ni3Sb, Ni5Sb2, NiSb2, and NiSb
Luo Xiao-Ning (罗肖宁), Dong Cheng (董成), Liu Shi-Kai (刘世凯), Zhang Zi-Ping (张子平), Li Ao-Lei (李傲雷), Yang Li-Hong (杨立红), Li Xiao-Chuan (李晓川). Chin. Phys. B, 2015, 24(6): 067201.
No Suggested Reading articles found!