GROWTH MODEL OF TEXTURED DIAMOND (111) FILM IN CH4/O2/H2 ATMOSPHERE

doi:10.1088/1004-423X/8/12/009

Abstract

Abstract Partially oriented and highly textured diamond films on Si( 111 ) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5×10⁸cm^-2 was realiged in 3 min by near-surface glow discharge. The os-grown films were characterized by scanning electron microscopy(SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH₄/H₂, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond (111) surface was demonstrated to be in Stranski-Krastanov model by SEM.

Received: 29 April 1999
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	68.47.Fg	(Semiconductor surfaces)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	52.80.Hc	(Glow; corona)
	68.37.Hk	(Scanning electron microscopy (SEM) (including EBIC))
	78.30.Am	(Elemental semiconductors and insulators)

Fund: Project supported by the National Natural Science Foundation of China(Grant No.59632010)

Cite this article:

WU JIN (武瑾), XIE FANG-QING (谢仿卿), ZHANG QING-ZHE (张青哲), LIU JI-WEN (刘技文), CHEN YOU-CUN (陈有存), LIN ZHANG-DA (林彰达) GROWTH MODEL OF TEXTURED DIAMOND (111) FILM IN CH₄/O₂/H₂ ATMOSPHERE 1999 Acta Physica Sinica (Overseas Edition) 8 932

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GROWTH MODEL OF TEXTURED DIAMOND (111) FILM IN CH4/O2/H2 ATMOSPHERE

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GROWTH MODEL OF TEXTURED DIAMOND (111) FILM IN CH₄/O₂/H₂ ATMOSPHERE