STRESS ANALYSIS IN CUBIC BORON NITRIDE FILMS BY X-RAY DIFFRACTION USING sin2$\psi$ METHOD
ZHANG XING-WANG (张兴旺)a, YUE JIN-SHUN (岳金顺)a, CHEN GUANG-HUA (陈光华)ab, YAN HUI (严辉)b, LIU WEN-JUN (刘文君)b
a Department of Physics, Lanzhou University, Lanzhou 730000, china; b Department of Applied Physics, Beijing Polytechnic University, Beijing 100022, China
Abstract The boron nitride (BN) films containing cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) were prepared by radio frequency a ssisted thermal filament chemical vapor deposition. The stress and strain in BN films were investigated by X-ray diffraction analysis using the sin2$\psi$ method. The results showed that both c-BN and h-BN in the same film have similar values of elastic strain, however, the compressive stress in c-BN is much greater than that in h-BN for the same film. Both stress and strain gradually decre ased with the increase of substrate temperature (Ts). The effective stress in the films calculated by the effective stress model increased with the increase of Ts. Furthermore, the dependence of effective stress in the films on Ts was also investigated.
Received: 23 May 1997
Revised: 11 August 1997
Accepted manuscript online:
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