VIOLET LIGHT-EMISSION FROM Ge+-IMPLANTED SiO2 FILMS ON Si SUBSTRATE
GAO TING (高婷)a, BAO XI-MAO (鲍希茂)a, YAN FENG (阎锋)a, TONG SONG (佟嵩)a, CHEB YI-JUN (陈逸郡)b
a Department of Physics and State Key Laboratory of Solid Microstructures,Nanjing University,Nanjing 210093,China; b Analysis Center of Nanjing University,Nanjing 210093,China
Abstract Germanium ions were implanted into SiO2 films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×1015 and 1×1016 cm-2.Under an ultraviolet excitation of ~5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T1→S0 transition in GeO,which was formed during implantation and annealing process.
Received: 06 August 1996
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China.
Cite this article:
GAO TING (高婷), BAO XI-MAO (鲍希茂), YAN FENG (阎锋), TONG SONG (佟嵩), CHEB YI-JUN (陈逸郡) VIOLET LIGHT-EMISSION FROM Ge+-IMPLANTED SiO2 FILMS ON Si SUBSTRATE 1997 Acta Physica Sinica (Overseas Edition) 6 466
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