Abstract The GaInAsSb as one of the most important semiconductor alloy systems for infrar ed detectors is well established. Samples of GaInAsSb alloys have been grown by atmospheric pressure metalorganic chemical vapor deposition on n-GaSb (Te-doped ) substrates. The properties of GaInAsSb layers were characterized by single-crystal X-ray diffraction, doublecrystal X-ray rocking curve and scanning elec tron acoustic microscopy. The spectral responses of p+-GaInAsSb/p-GaInAsSb/n-GaSb detectors showed cut-off wavelength at 2.4μm,detectivity D=1.2×109 cmHz0.05/W at room temperature,and quantum efficiency 40%.
First-principles study of He trapping in η-Fe2C Bing-Ling He(赫丙玲), Jin-Long Wang(王金龙), Zhi-Xue Tian(田之雪), Li-Juan Jiang(蒋利娟), Wei Song(宋薇), Bin Wang(王斌). Chin. Phys. B, 2016, 25(11): 116801.
Effect of the thickness of InGaN interlayer on a-plane GaN epilayer Wang Jian-Xia (王建霞), Wang Lian-Shan (汪连山), Zhang Qian (张谦), Meng Xiang-Yue (孟祥岳), Yang Shao-Yan (杨少延), Zhao Gui-Juan (赵桂娟), Li Hui-Jie (李辉杰), Wei Hong-Yuan (魏鸿源), Wang Zhan-Guo (王占国). Chin. Phys. B, 2015, 24(2): 026802.
Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer Wang Jian-Xia (王建霞), Wang Lian-Shan (汪连山), Yang Shao-Yan (杨少延), Li Hui-Jie (李辉杰), Zhao Gui-Juan (赵桂娟), Zhang Heng (张恒), Wei Hong-Yuan (魏鸿源), Jiao Chun-Mei (焦春美), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国). Chin. Phys. B, 2014, 23(2): 026801.
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