INVESTIGATION OF GROWTH CHARACTERISTICS OF MONOCRYSTALLINE C60 FILMS IN HELIUM GAS ENVIRONMENT

doi:10.1088/1004-423X/6/2/005

Abstract

Abstract The growth characteristics of C₆₀ films were investigated in helium gas environment at pressures of 0, 2.667×10^-2 and 6.667×10^-2 Pa, respectively. X-ray diffraction results showed that perfectly (111) oriented monocrystalline C₆₀ films with large grains were successfully deposited on synthetic 1M phlogopite mica-fluorophlogopite (0Ol) plane at a substrate temperature of 160℃ when the helium gas pressure is 2.667×10^-2 Pa. The results indicated that under appropriate helium gas pressure, the energy change of C₆₀ molecules through collisions with helium atoms, and the decrease of the supersaturation of the vapor pressure in the vicinity of the substrate resulted in a quasi-thermodynamic equilibrium deposition system. As a result, well-structured monocrystalline C₆₀ films were deposited on (001) plane of the fluorophlogopite substrate.

Received: 03 June 1996
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	61.05.cp	(X-ray diffraction)
	34.50.-s	(Scattering of atoms and molecules)
	65.40.G-	(Other thermodynamical quantities)

Fund: Project supported by the National Natural Science Foundation of China.

Cite this article:

MA GUO-BIN (马国斌), YANG YING-HU (杨映虎), CHEN GUANG-HUA (陈光华) INVESTIGATION OF GROWTH CHARACTERISTICS OF MONOCRYSTALLINE C₆₀ FILMS IN HELIUM GAS ENVIRONMENT 1997 Acta Physica Sinica (Overseas Edition) 6 125

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INVESTIGATION OF GROWTH CHARACTERISTICS OF MONOCRYSTALLINE C60 FILMS IN HELIUM GAS ENVIRONMENT

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INVESTIGATION OF GROWTH CHARACTERISTICS OF MONOCRYSTALLINE C₆₀ FILMS IN HELIUM GAS ENVIRONMENT