INTERFACE FORMATION OF Ge/ZnSe(100) AND Ge/ZnS(111) HETEROJUNCTIONS STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION
BAN DA-YAN (班大雁)a, YANG FENG-YUAN (杨风源)a, FANG RONG-CHUAN (方容川)a, XU SHI-HONG (徐世宏)b, XU PENG-SHOU (徐鹏寿)b
a Department of Physics, University of Science and Technology of China, Hefei 230026, China; b National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
Abstract The microscopic evolution of interface formation between Ge and Ⅱ-Ⅵ compounds such as ZnSe and ZnS single crystals has been studied by synchrotron radiation photoemission spectroscopy and low energy electron diffraction. Core level intensity measurements from the substrate as well as from the overlayer show a nearly ideal two-dimensional growth mode for the deposition of Ge on ZnSe(100) surface. How-ever, there is a certain deviation from the ideal two-dimensional mode in the case of Ge/ZnS(111) due to the diffusion of substrate atoms into Ge overlayer. Surface semi-tire core level spectra indicate that the reaction of Ge with S atoms at Ge/ZnS(111) interfaces is much stronger than that of Ge with Se atoms at Ge/ZnSe(100) interfaces.
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