Please wait a minute...
Acta Physica Sinica (Overseas Edition), 1996, Vol. 5(3): 207-212    DOI: 10.1088/1004-423X/5/3/007
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

SOFT-X-RAY PHOTOEMISSION STUDY OF Mn/GaP(100) INTERFACE

XU SHI-HONG (徐世红)a, XU PENG-SHOU (徐彭寿), LU ER-DONG (陆尔东), YU XIAO-JIANG (余小江), ZHANG XIN-YI (张新夷), YANG FENG-YUAN (杨风源)
Natiotnal Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China; a Also Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China
Abstract  The interface formation and electronic structures of the Mn/GaP(100) interface are studied with synchrotron radiation photoemission, At the early stage of Mn deposition, Mn covers the whole GAP(100) surface. With the increase of coverage, Ga atoms can be exchanged by Mn atoms and diffuse into the Mn overLaycr. However, P atoms remain always near the interracial region. A sigaificant difference of the electronic structures is observed between the ultra-thin and the thick Mn films. The explanations for this are given in the text.
Received:  11 March 1995      Accepted manuscript online: 
PACS:  79.60.Jv (Interfaces; heterostructures; nanostructures)  
  73.20.At (Surface states, band structure, electron density of states)  
  68.43.Mn (Adsorption kinetics ?)  
  68.47.Fg (Semiconductor surfaces)  
Fund: Project supported by the National Natural Science Foundation of China.

Cite this article: 

XU SHI-HONG (徐世红), XU PENG-SHOU (徐彭寿), LU ER-DONG (陆尔东), YU XIAO-JIANG (余小江), ZHANG XIN-YI (张新夷), YANG FENG-YUAN (杨风源) SOFT-X-RAY PHOTOEMISSION STUDY OF Mn/GaP(100) INTERFACE 1996 Acta Physica Sinica (Overseas Edition) 5 207

[1] Growth behaviors and emission properties of Co-deposited MAPbI3 ultrathin films on MoS2
Siwen You(游思雯), Ziyi Shao(邵子依), Xiao Guo(郭晓), Junjie Jiang(蒋俊杰), Jinxin Liu(刘金鑫), Kai Wang(王凯), Mingjun Li(李明君), Fangping Ouyang(欧阳方平), Chuyun Deng(邓楚芸), Fei Song(宋飞), Jiatao Sun(孙家涛), and Han Huang(黄寒). Chin. Phys. B, 2023, 32(1): 017901.
[2] Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator
Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平). Chin. Phys. B, 2022, 31(12): 127701.
[3] Lithium ion batteries cathode material: V2O5
Baohe Yuan(袁保合), Xiang Yuan(袁祥), Binger Zhang(张冰儿), Zheng An(安政), Shijun Luo(罗世钧), and Lulu Chen(陈露露). Chin. Phys. B, 2022, 31(3): 038203.
[4] Morphological effect on electrochemical performance of nanostructural CrN
Zhengwei Xiong(熊政伟), Xuemei An(安雪梅), Qian Liu(刘倩), Jiayi Zhu(朱家艺), Xiaoqiang Zhang(张小强), Chenchun Hao(郝辰春), Qiang Yang(羊强), Zhipeng Gao(高志鹏), and Meng Zhang(张盟). Chin. Phys. B, 2021, 30(12): 128201.
[5] Photoemission oscillation in epitaxially grown van der Waals β-In2Se3/WS2 heterobilayer bubbles
Jiyu Dong(董继宇), Kang Lin(林康), Congpu Mu(牟从普), Zhiyan Jia(贾智研), Jin Xu(徐瑾), Anmin Nie(聂安民), Bochong Wang(王博翀), Jianyong Xiang(向建勇), Fusheng Wen(温福昇), Kun Zhai(翟昆), Tianyu Xue(薛天宇), and Zhongyuan Liu(柳忠元). Chin. Phys. B, 2021, 30(11): 117901.
[6] Intercalation of germanium oxide beneath large-area and high-quality epitaxial graphene on Ir(111) substrate
Xueyan Wang(王雪艳), Hui Guo(郭辉), Jianchen Lu(卢建臣), Hongliang Lu(路红亮), Xiao Lin(林晓), Chengmin Shen(申承民), Lihong Bao(鲍丽宏), Shixuan Du(杜世萱), and Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2021, 30(4): 048102.
[7] Influence of fluoroethylene carbonate on the solid electrolyte interphase of silicon anode for Li-ion batteries: A scanning force spectroscopy study
Jieyun Zheng(郑杰允), Jialiang Liu(刘家亮), Suijun Wang(王绥军), Fei Luo(罗飞), Liubin Ben(贲留斌), Hong Li(李泓). Chin. Phys. B, 2020, 29(4): 048203.
[8] Fabrication of large-scale graphene/2D-germanium heterostructure by intercalation
Hui Guo(郭辉), Xueyan Wang(王雪艳), De-Liang Bao(包德亮), Hong-Liang Lu(路红亮), Yu-Yang Zhang(张余洋), Geng Li(李更), Ye-Liang Wang(王业亮), Shi-Xuan Du(杜世萱), Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2019, 28(7): 078103.
[9] Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures
Zhen-Hua Wang(王振华), Xuan P A Gao(高翾), Zhi-Dong Zhang(张志东). Chin. Phys. B, 2018, 27(10): 107901.
[10] Surface-tension-confined droplet microfluidics
Xinlian Chen(陈新莲), Han Wu(伍罕), Jinbo Wu(巫金波). Chin. Phys. B, 2018, 27(2): 029202.
[11] Interfaces of high-efficiency kesterite Cu2ZnSnS(e)4 thin film solar cells
Shoushuai Gao(高守帅), Zhenwu Jiang(姜振武), Li Wu(武莉), Jianping Ao(敖建平), Yu Zeng(曾玉), Yun Sun(孙云), Yi Zhang(张毅). Chin. Phys. B, 2018, 27(1): 018803.
[12] Graphene/Mo2C heterostructure directly grown by chemical vapor deposition
Rongxuan Deng(邓荣轩), Haoran Zhang(张浩然), Yanhui Zhang(张燕辉), Zhiying Chen(陈志蓥), Yanping Sui(隋妍萍), Xiaoming Ge(葛晓明), Yijian Liang(梁逸俭), Shike Hu(胡诗珂), Guanghui Yu(于广辉), Da Jiang(姜达). Chin. Phys. B, 2017, 26(6): 067901.
[13] Topological transport in Dirac electronic systems: A concise review
Hua-Ding Song(宋化鼎), Dian Sheng(盛典), An-Qi Wang(王安琦), Jin-Guang Li(李金光), Da-Peng Yu(俞大鹏), Zhi-Min Liao(廖志敏). Chin. Phys. B, 2017, 26(3): 037301.
[14] Photodetecting and light-emitting devices based on two-dimensional materials
Yuanfang Yu(于远方), Feng Miao(缪峰), Jun He(何军), Zhenhua Ni(倪振华). Chin. Phys. B, 2017, 26(3): 036801.
[15] In-situ characterization of electrochromism based on ITO/PEDOT:PSS towards preparation of high performance device
Xue-Jin Wang(王学进), Zheng-Fei Guo(郭正飞), Jing-Yu Qu(曲婧毓),Kun Pan(潘坤), Zheng Qi(祁铮), Hong Li(李泓). Chin. Phys. B, 2016, 25(2): 028201.
No Suggested Reading articles found!