BEHAVIOR OF Ar PLASMA FORMED IN A HIGH DENSITY PLASMA SOURCE-AN ECR REACTOR
WU HAN-MING (吴汉明), D.B. GRAVESa, R.K PORTEOUSb, LI MING (李明)
Institute of Mechanics, Academia Sinica, Beijing 100080, China; and China Center of Advanced Science and Technology (World Laboratory), P. O. Box 873O, Beijing 100080, China; b Department of Chemical Engineering, University of California, Berkeley CA94720, U.S.A.; c Plasma Research Laboratory. Australia National University, Canberra, Australia.
Abstract In order to develop the ultra-large scale integration(ULSI), low pressure and high density plasma apparatus are required for etching and deposit of thin films. To understand critical parameters such as the pressure, temperature, electrostatic potential and energy distribution of ions impacting on the wafer, it is necessary to understand how these parameters are influenced by the power input and neutral gas pressure. In the present work, a 2-D hybrid electron fluid-particle ion model has been developed to simulate one of the high density plasma sources-an Electron Cyclotron Resonance (ECR) plasma system with various pressures and power inputs in a non-uniform magnetic field. By means of numerical simulation, the energy distributions of argon ion impacting on the wafer are obtained and the plasma density, electron temperature and plasma electrostatic potential are plotted in 3-D. It is concluded that the plasma density depends mainly on both the power input and neutral gas pressure. However, the plasma potential and electron temperature can hardly be affected by the power input, they seem to be primarily dependent on the neutral gas pressure. The comparison shows that the simulation results are qualitatively in good agreement with the experiment measurements.
Received: 07 December 1993
Accepted manuscript online:
Fund: Project supported in part by the Presidential Foundation of the Chinese Academy of Sciences.
Cite this article:
WU HAN-MING (吴汉明), D.B. GRAVES, R.K PORTEOUS, LI MING (李明) BEHAVIOR OF Ar PLASMA FORMED IN A HIGH DENSITY PLASMA SOURCE-AN ECR REACTOR 1994 Acta Physica Sinica (Overseas Edition) 3 746
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