A modular-bias-sin chaotification method for enhanced discrete memristor chaotic maps

doi:10.1088/1674-1056/ae181e

Abstract This paper proposes a novel modular-bias-sin chaotification method (MBSC) to address the limitations of existing discrete memristor (DM)-based chaotic maps. By applying MBSC to several fundamental discrete memristors, the enhanced chaotic variants are constructed. Comprehensive dynamical analyses, including attractor phase diagrams, Lyapunov exponents, bifurcation diagrams, Shannon entropy (SE) complexity, and chaotic region scale (CRS), demonstrate that the MBSC-enhanced maps outperform the original DM maps and existing modified models. Specifically, they exhibit wider chaotic parameter ranges, larger Lyapunov exponents, higher SE complexity, and robust hyperchaotic behavior. To validate practical applicability, a pseudo-random number generator (PRNG) based on the enhanced chaotic maps is implemented, which passes all NIST SP 800-22 statistical tests, confirming its high randomness and suitability for security-sensitive applications.

Keywords: discrete memristor chaotification method dynamical analyses pseudo-random number generator

Received: 10 September 2025
Revised: 21 October 2025
Accepted manuscript online: 28 October 2025

PACS:	05.45.-a	(Nonlinear dynamics and chaos)
	84.30.-r	(Electronic circuits)
	05.45.Pq	(Numerical simulations of chaotic systems)

Fund: This work was supported by the National Natural Science Foundation of China (Grant Nos. 62071496 and 62061008).

Corresponding Authors: Huihai Wang
E-mail: wanghuihai_csu@csu.edu.cn

Cite this article:

Shu Yi(易澍), Huihai Wang(王会海), and Kehui Sun(孙克辉) A modular-bias-sin chaotification method for enhanced discrete memristor chaotic maps 2026 Chin. Phys. B 35 070504

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A modular-bias-sin chaotification method for enhanced discrete memristor chaotic maps

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