A universal resist-assisted metal transfer method for 2D semiconductor contacts

doi:10.1088/1674-1056/ad8db4

Abstract With the explosive exploration of two-dimensional (2D) semiconductors for device applications, ensuring effective electrical contacts has become critical for optimizing device performance. Here, we demonstrate a universal resist-assisted metal transfer method for creating nearly free-standing metal electrodes on the SiO$_{2}$/Si substrate, which can be easily transferred onto 2D semiconductors to form van der Waals (vdW) contacts. In this method, polymethyl methacrylate (PMMA) serves both as an electron resist for electrode patterning and as a sacrificial layer. Contacted with our transferred electrodes, MoS$_{2}$ exhibits tunable Schottky barrier heights and a transition from n-type dominated to ambipolar conduction with increasing metal work functions, while InSe shows pronounced ambipolarity. Additionally, using $\alpha$-In$_{2}$Se$_{3}$ as an example, we demonstrate that our transferred electrodes enhance resistance switching in ferroelectric memristors. Finally, the universality of our method is evidenced by the successful transfer of various metals with different adhesion forces and complex patterns.

Keywords: metal electrode transfer 2D materials Schottky barrier ambipolar memristor

Received: 26 September 2024
Revised: 31 October 2024
Accepted manuscript online: 01 November 2024

PACS:	73.40.Ns	(Metal-nonmetal contacts)
	72.20.Fr	(Low-field transport and mobility; piezoresistance)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	73.20.-r	(Electron states at surfaces and interfaces)

Fund: This work was supported by the National Key Research & Development Project of China (Grant No. 2022YFA1204100), the National Natural Science Foundation of China (Grant No. 62488201), Strategic Priority Research Program of Chinese Academy of Sciences (CAS, Grant Nos. XDB30000000 and XDB28000000), CAS Project for Young Scientists in Basic Research (Grant No. YSBR-003), the Innovation Program of Quantum Science and Technology (Grant No. 2021ZD0302700), and Beijing Outstanding Young Scientist Program (Grant No. BJJWZYJH01201914430039).

Corresponding Authors: Wu Zhou, Lihong Bao
E-mail: wuzhou@ucas.ac.cn;lhbao@iphy.ac.cn

Cite this article:

Xuanye Liu(刘轩冶), Linxuan Li(李林璇), Chijun Wei(尉驰俊), Peng Song(宋鹏), Hui Gao(高辉), Kang Wu(吴康), Nuertai Jiazila(努尔泰cdot加孜拉), Jiequn Sun(孙杰群), Hui Guo(郭辉), Haitao Yang(杨海涛), Wu Zhou(周武), Lihong Bao(鲍丽宏), and Hong-Jun Gao(高鸿钧) A universal resist-assisted metal transfer method for 2D semiconductor contacts 2024 Chin. Phys. B 33 127302

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