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Chin. Phys. B, 2023, Vol. 32(12): 127509    DOI: 10.1088/1674-1056/acfaf7
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Discovery of new potential magnetic semiconductors in quaternary Heusler compounds by addition of lanthanides

Jin Guo(郭金), Shiyi Feng(冯时怡), Rong Tao(陶容), Guoxia Wang(王国霞), Yue Wang(王越), and Zhifeng Liu(刘志锋)
School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
Abstract  Magnetic semiconductors have attracted a lot of attention by having both electronic charge and spin degrees of freedom. In this paper, we obtained twenty magnetic semiconductors such as FeVLaSb, FeVPrSb, FeCrTbSi, CoVDySi, and CoVHoSi by adding lanthanides to quaternary Heusler compounds based on the Slater-Pauling law and orbital hybridization theory. The relationship between the lattice constants and energy gaps of the magnetic semiconductors with lanthanide elements is investigated by in-depth analysis. These magnetic semiconductors of quaternary Heusler compounds are promising candidates to find applications as spin filtering materials in spintronics devices.
Keywords:  magnetic semiconductor      rare-earth element      quaternary Heusler compounds  
Received:  15 July 2023      Revised:  16 September 2023      Accepted manuscript online:  19 September 2023
PACS:  75.50.Pp (Magnetic semiconductors)  
  72.20.Ee (Mobility edges; hopping transport)  
  71.20.Nr (Semiconductor compounds)  
Fund: Project supported by Inner Mongolia Science Foundation, China (Grant No.2022MS01012) and the National Natural Science Foundation of China (Grant No.11904185).
Corresponding Authors:  Yue Wang     E-mail:  m05wangy@163.com

Cite this article: 

Jin Guo(郭金), Shiyi Feng(冯时怡), Rong Tao(陶容), Guoxia Wang(王国霞), Yue Wang(王越), and Zhifeng Liu(刘志锋) Discovery of new potential magnetic semiconductors in quaternary Heusler compounds by addition of lanthanides 2023 Chin. Phys. B 32 127509

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