Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

doi:10.1088/1674-1056/acd7cf

Abstract Doping in Si nanocrystals is an interesting topic and directly studying the distribution of dopants in phosphorous/boron co-doping is an important issue facing the scientific community. In this study, atom probe tomography is performed to study the structures and distribution of impurity in phosphorous/boron co-doped Si nanocrystals/SiO₂ multilayers. Compared with phosphorous singly doped Si nanocrystals, it is interesting to find that the concentration of phosphorous in co-doped samples can be significantly improved. Theoretical simulation suggests that phosphorous-boron pairs are formed in co-doped Si nanocrystals with the lowest formation energy, which also reduces the formation energy of phosphorous in Si nanocrystals. The results indicate that co-doping can promote the entry of phosphorous impurities into the near-surface and inner sites of Si nanocrystals, which provides an interesting way to regulate the electronic and optical properties of Si nanocrystals such as the observed enhancement of conductivity and sub-band light emission.

Keywords: Si nanocrystals phosphorous and boron co-doping impurity distribution

Received: 01 March 2023
Revised: 04 May 2023
Accepted manuscript online: 23 May 2023

PACS:	61.72.uf	(Ge and Si)
	61.82.Rx	(Nanocrystalline materials)
	61.72.U-	(Doping and impurity implantation)
	61.72.sh	(Impurity distribution)

Fund: Project supported by the National Key Research and Development Program of China (Grant No.2018YFB2200101), the National Natural Science Foundation of China (Grant Nos.62004078 and 61921005), Natural Science Foundation of Jiangsu Province (Grant No.BK20201073), Natural Science Foundation of Ningbo (Grant No.2021J068), ANR DONNA (Grant No.ANR-18-CE09-0034), and Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou (Grant No.TD2022012). This work was partially supported by the CNRS Federation IRMA-FR 3095.

Corresponding Authors: Wanghua Chen, Jun Xu
E-mail: chenwanghua@nbu.edu.cn;junxu@nju.edu.cn

Cite this article:

Dongke Li(李东珂), Junnan Han(韩俊楠), Teng Sun(孙腾), Jiaming Chen(陈佳明), Etienne Talbot, Rémi Demoulin, Wanghua Chen(陈王华), Xiaodong Pi(皮孝东), Jun Xu(徐骏), and Kunji Chen(陈坤基) Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals 2023 Chin. Phys. B 32 126102

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Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

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