CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO2 dielectric |
Han Kai (韩锴)a b, Wang Xiao-Lei (王晓磊)b, Yang Hong (杨红)b, Wang Wen-Wu (王文武)b |
a Department of Physics and Electronic Science, Weifang University, Weifang 261061, China; b Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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Abstract Gd-doped HfO2 has drawn worldwide interest for its interesting features. It is considered to be a suitable material for N-type metal-oxide-semiconductor (MOS) devices due to a negative flatband voltage (Vfb) shift caused by the Gd doping. In this work, an anomalous positive shift was observed when Gd was doped into HfO2. The cause for such a phenomenon was systematically investigated by distinguishing the effects of different factors, such as Fermi level pinning (FLP), a dipole at the dielectric/SiO2 interface, fixed interfacial charge, and bulk charge, on Vfb. It was found that the FLP and interfacial dipole could make Vfb negatively shifted, which is in agreement with the conventional dipole theory. The increase in interfacial fixed charge resulting from Gd doping plays a major role in positive Vfb shift.
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Received: 29 March 2013
Revised: 31 May 2013
Accepted manuscript online:
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PACS:
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77.55.D-
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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Fund: Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2009ZX02035) and the National Natural Science of China (Grant Nos. 61176091 and 50932001). |
Corresponding Authors:
Han Kai
E-mail: hankai@ime.ac.cn
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Cite this article:
Han Kai (韩锴), Wang Xiao-Lei (王晓磊), Yang Hong (杨红), Wang Wen-Wu (王文武) Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO2 dielectric 2013 Chin. Phys. B 22 117701
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