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Method of simulating hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink |
| Min-Hui Ji(冀敏慧)1, Xin-Miao Zhang(张欣苗)1, Meng-Chun Pan(潘孟春)1, Qing-Fa Du(杜青法)1, Yue-Guo Hu(胡悦国)1, Jia-Fei Hu(胡佳飞)1, Wei-Cheng Qiu(邱伟成)1, Jun-Ping Peng(彭俊平)1, Zhu Lin(林珠)2, and Pei-Sen Li(李裴森)1,† |
1 College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China;
2 Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing 100084, China |
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Abstract The spin-transfer-torque (STT) magnetic tunneling junction (MTJ) device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing. Therefore, building a simulation framework of hybrid STT-MTJ/CMOS (complementary metal-oxide-semiconductor) circuits is of great value for designing a new kind of computing paradigm based on the spintronic devices. In this work, we develop a simulation framework of hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink, which is mainly composed of a physics-based STT-MTJ model, a controlled resistor, and a current sensor. In the proposed framework, the STT-MTJ model, based on the Landau-Lifshitz-Gilbert-Slonczewsk (LLGS) equation, is implemented using the MATLAB script. The proposed simulation framework is modularized design, with the advantage of simple-to-use and easy-to-expand. To prove the effectiveness of the proposed framework, the STT-MTJ model is benchmarked with experimental results. Furthermore, the pre-charge sense amplifier (PCSA) circuit consisting of two STT-MTJ devices is validated and the electrical coupling of two spin-torque oscillators is simulated. The results demonstrate the effectiveness of our simulation framework.
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Received: 25 October 2022
Revised: 16 December 2022
Accepted manuscript online: 21 December 2022
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PACS:
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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75.70.-i
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(Magnetic properties of thin films, surfaces, and interfaces)
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75.75.-c
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(Magnetic properties of nanostructures)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 62004223), the Science and Technology Innovation Program of Hunan Province, China (Grant No. 2022RC1094), the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics, China (Grant No. KF202012), and the Hunan Provincial Science Innovation Project for Postgraduate, China (Grant No. CX20210086). |
Corresponding Authors:
Pei-Sen Li
E-mail: lpsen@nudt.edu.cn
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Cite this article:
Min-Hui Ji(冀敏慧), Xin-Miao Zhang(张欣苗), Meng-Chun Pan(潘孟春), Qing-Fa Du(杜青法), Yue-Guo Hu(胡悦国), Jia-Fei Hu(胡佳飞), Wei-Cheng Qiu(邱伟成), Jun-Ping Peng(彭俊平), Zhu Lin(林珠), and Pei-Sen Li(李裴森) Method of simulating hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink 2023 Chin. Phys. B 32 078506
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