Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice

doi:10.1088/1674-1056/26/1/018505

Abstract A very long wavelength infrared(VLWIR) focal plane array based on InAs/GaSb type-II super-lattices is demonstrated on a GaSb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K. A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of -20 mV, yielding a peak specific detectivity of 5.89×10¹⁰ cm·Hz^1/2·W^-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.

Keywords: very long wavelength infrared type-II InAs/GaSb super-lattices (T2SLs) focal plane array

Received: 18 July 2016
Revised: 18 October 2016
Accepted manuscript online:

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	73.21.Cd	(Superlattices)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2013CB932904 and 2011CB922201), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), and the National Natural Science Foundation of China (Grant Nos. 61274013, 61290303, and 61306013).

Corresponding Authors: Zhi-Chuan Niu
E-mail: zcniu@semi.ac.cn

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Xi Han(韩玺), Wei Xiang(向伟), Hong-Yue Hao(郝宏玥), Dong-Wei Jiang(蒋洞微), Yao-Yao Sun(孙姚耀), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川) Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice 2017 Chin. Phys. B 26 018505

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Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice

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