Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array

doi:10.1088/1674-1056/26/4/047303

Abstract In this paper we focused on the mask technology of inductively coupled plasma (ICP) etching for the mesa fabrication of infrared focal plane arrays (FPA). By using the SiO₂ mask, the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls. Comparing the IV characterization of detectors by using two different masks, the detector using the SiO₂ hard mask has the R₀A of 9.7×10⁶ Ω·cm², while the detector using the photoresist mask has the R₀A of 3.2×10² Ω·cm² in 77 K. After that we focused on the method of removing the remaining SiO₂ after mesa etching. The dry ICP etching and chemical buffer oxide etcher (BOE) based on HF and NH₄F are used in this part. Detectors using BOE only have closer R₀A to that using the combining method, but it leads to gaps on mesas because of the corrosion on AlSb layer by BOE. We finally choose the combining method and fabricated the 640×512 FPA. The FPA with cutoff wavelength of 4.8 μm has the average R₀A of 6.13×10⁹ Ω·cm² and the average detectivity of 4.51×10⁹ cm·Hz^1/2·W^-1 at 77 K. The FPA has good uniformity with the bad dots rate of 1.21% and the noise equivalent temperature difference (NEDT) of 22.9 mK operating at 77 K.

Keywords: InAs/GaSb superlattices etching mask mid-wavelength infared focal plane arrays

Received: 03 November 2016
Revised: 09 January 2017
Accepted manuscript online:

PACS:	73.21.Cd	(Superlattices)
	73.61.Ey	(III-V semiconductors)
	52.77.Bn	(Etching and cleaning)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2014CB643903, 2013CB932904, 2012CB932701, and 2011CB922201), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), the National Natural Science Foundation of China (Grant Nos. 61274013, U1037602, 61306013, and 61290303), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB01010200), and China Postdoctoral Science Foundation (Grant No. 2014M561029).

Corresponding Authors: Zhi-Chuan Niu
E-mail: zcniu@semi.ac.cn

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Hong-Yue Hao(郝宏玥), Wei Xiang(向伟), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Xi Han(韩玺), Yao-Yao Sun(孙瑶耀), Dong-Wei Jiang(蒋洞微), Yu Zhang(张宇), Yong-Ping Liao(廖永平), Si-Hang Wei(魏思航), Zhi-Chuan Niu(牛智川) Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array 2017 Chin. Phys. B 26 047303

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[1]	Short-wave infrared InGaAs photodetectors and focal plane arrays Yong-Gang Zhang(张永刚), Yi Gu(顾溢), Xiu-Mei Shao(邵秀梅), Xue Li(李雪), Hai-Mei Gong(龚海梅), Jia-Xiong Fang(方家熊). Chin. Phys. B, 2018, 27(12): 128102.
[2]	Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors Wang Yong-Bin (王永宾), Xu Yun (徐云), Zhang Yu (张宇), Yu Xiu (迂修), Song Guo-Feng (宋国峰), Chen Liang-Hui (陈良惠). Chin. Phys. B, 2011, 20(6): 067302.

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Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array

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