To obtain the adjustable photonic crystals (PCs), we numerically investigate one-dimensional (1D) PCs with alternating VO2 and SiO2 layers through transfer matrix method. The dispersion relation agrees well with the transmittance obtained by the finite element calculation. Tunable band gaps are achieved with the thermal stimuli of VO2, which has two crystal structures. The monoclinic crystal structure VO2 (R) at low temperature exhibits insulating property, and the high temperature square rutile structure VO2 (M) presents metal state. Concretely, the bandwidth is getting narrower and red shift occurs with the higher temperature in VO2 (R)/SiO2 PCs structure. Based on the phase change characteristics of VO2, we can flexibly adjust the original structure as VO2 (R)/VO2 (M)/SiO2. By increasing the phase ratio of VO2 (R) to VO2 (M), the band gap width gradually becomes wider and blue shift occurs. The discrete layers of gradient composites on the dispersion of 1D PCs are also investigated, which enhances the feasibility in practical operation. Thus, our proposed thermal modulation PCs structure paves a new way to realize thermal tunable optical filters and sensors.
* Project supported by the Key Science and Technology Research Project of Henan Province, China (Grant No. 1721023100107).
Cite this article:
Yuanlin Jia(贾渊琳), Peiwen Ren(任佩雯), and Chunzhen Fan(范春珍)† Thermal tunable one-dimensional photonic crystals containing phase change material 2020 Chin. Phys. B 29 104210
Fig. 1.
Real part of the effective dielectric constant of VO2 at different temperature in THz region.
Fig. 2.
The 3D configuration and the cross section view of the VO2 (R)/SiO2 PCs structure.
Fig. 3.
(a) The dispersion relation of VO2 (R)/SiO2 PCs structure obtained with transfer matrix method. (b) The transmission spectrum of the structure obtained with numerical simulation.
Fig. 4.
The influence of temperature on the dispersion relation of VO2 (R)/SiO2 PCs in the range of 0–125 THz.
Fig. 5.
(a) The 3D configuration and cross section view of the VO2 (R)/VO2 (M)/SiO2 PCs structure. (b) The dispersion curve obtained with transfer matrix method. (c) The transmission spectrum of VO2 (R)/VO2 (M)/SiO2 PCs structure obtained with numerical calculation.
Fig. 6.
(a) and (c) The influence of different proportions of VO2 (R) and VO2 (M), a1/a2, on the dispersion relation. (b) and (d) The position and band gap of the first band with different a1/a2.
Fig. 7.
(a) and (b) The position and band gap of the second band with different a1/a2. (c) and (d) The position and band gap of the third band with different a1/a2.
Fig. 8.
(a) The dispersion curve of 1D PCs with different number of layers. (b) The position and the first band width with different layers of VO2.
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