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Chin. Phys. B, 2019, Vol. 28(11): 117201    DOI: 10.1088/1674-1056/ab43bb

Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor

Yu Guo(郭玉), Gang-Qiang Zha(查钢强), Ying-Rui Li(李颖锐), Ting-Ting Tan(谭婷婷), Hao Zhu(朱昊), Sen Wu(吴森)
MIIT Key Laboratory of Radiation Detection Materials and Devices, State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University(NWPU), Xi'an 710072, China
Abstract  The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped carriers; the perturbation of electric field due to drifting carriers has been rarely reported. In this study, the effect of transient space-charge perturbation on carrier transport in a CdZnTe semiconductor is evaluated by using the laser-beam-induced current (LBIC) technique. Cusps appear in the current curves of CdZnTe detectors with different carrier transport performances under intense excitation, indicating the deformation of electric field. The current signals under different excitations are compared. The results suggest that with the increase of excitation, the amplitude of cusp increases and the electron transient time gradually decreases. The distortion in electric field is independent of carrier transport performance of detector. Transient space-charge perturbation is responsible for the pulse shape and affects the carrier transport process.
Keywords:  CdZnTe      transient space-charge perturbation      laser-beam-induced current (LBIC) technique      carrier transport  
Received:  24 June 2019      Revised:  05 September 2019      Accepted manuscript online: 
PACS:  72.80.Ey (III-V and II-VI semiconductors)  
  73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)  
  73.61.Ga (II-VI semiconductors)  
  72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61874089), the Fund of MIIT (Grant No. MJ-2017-F-05), the 111 Project of China (Grant No. B08040), the NPU Foundation for Fundamental Research, China, and the Research Found of the State Key Laboratory of Solidification Processing (NWPU), China.
Corresponding Authors:  Gang-Qiang Zha     E-mail:

Cite this article: 

Yu Guo(郭玉), Gang-Qiang Zha(查钢强), Ying-Rui Li(李颖锐), Ting-Ting Tan(谭婷婷), Hao Zhu(朱昊), Sen Wu(吴森) Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor 2019 Chin. Phys. B 28 117201

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