Temporal pulsed x-ray response of CdZnTe:In detector

doi:10.1088/1674-1056/27/12/127202

Abstract

The temporal response of cadmium-zinc-telluride (CZT) crystals is evaluated at room temperature by using an ultrafast-pulsed x-ray source. The dynamics of carrier relaxation in a CZT single crystal is modeled at a microscopic level based on a multi-trapping effect. The effects of the irradiation flux and bias voltage on the amplitude and full width at half maximum (FWHM) of the transient currents are investigated. It is demonstrated that the temporal response process is affected by defect level occupation fraction. A fast photon current can be achieved under intense pulsed x-ray irradiation to be up to 2.78×10⁹ photons mm^-2·s^-1. Meanwhile, it is found that high bias voltage could enhance carrier detrapping by suppressing the capture of structure defects and thus improve the temporal response of CZT detectors.

Keywords: CdZnTe ultrafast-pulsed x-rays transient current charge carrier

Received: 17 August 2018
Revised: 26 September 2018
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	73.50.Gr	(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
	73.61.Ga	(II-VI semiconductors)
	72.20.Jv	(Charge carriers: generation, recombination, lifetime, and trapping)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 51702271 and U1631116), the Young and Middle-aged Teachers Education and Scientific Research Foundation of Fujian Province, China (Grant No. JAT170407), the High Level Talent Project of Xiamen University of Technology, China (Grant No.YKJ16016R), and the Fund of the State Key Laboratory of Solidification Processing in NWPU, China (Grant No. SKLSP201741).

Corresponding Authors: Ya-Dong Xu
E-mail: xyd220@nwpu.edu.cn

Cite this article:

Rong-Rong Guo(郭榕榕), Ya-Dong Xu(徐亚东), Gang-Qiang Zha(查钢强), Tao Wang(王涛), Wan-Qi Jie(介万奇) Temporal pulsed x-ray response of CdZnTe:In detector 2018 Chin. Phys. B 27 127202

[1]	Tai Y C, Ruangma A, Rowl, D, Siegel S, Newport D F, Chow P L and Laforest R 2005 J. Nucl. Med. 46 455
[2]	Van Loef E V D, Dorenbos P, Van Eijk C W E, Krämer K and Güdel H U 2001 Appl. Phys. Lett. 79 1573
[3]	Schlesinger T E, Toney J E, Yoon H, Lee E Y, Brunett B A, Franks L and James R B 2001 Mater. Sci. Eng. R Rep. 32 103
[4]	Herzog B A, Buechel R R, Katz R, Brueckner M, Husmann L, Burger I A, Pazhenkottil A P, Valenta I, Gaemperli O, Treyer V and Kaufmann P A 2010 J. Nucl. Med. 51 46
[5]	Hong J, Allen B, Grindlay J, Barthelemy S, Baker R, Garson A, Krawczynski H, Apple J, Clevel and W H 2011 Nucl. Instrum. Methods Phys. Res. Sect. A 654 361
[6]	Okada Y, Takahashi T, Sato G, Watanabe S, Nakazawa K and Mori K 2002 IEEE Trans. Nucl. Sci. 49 1986
[7]	Glasser F, Gerbe V, OuvrierBuffet P, Accensi M, Girard J L, Renaud M and GerstenMayer J L 2001 Nucl. Instrum. Methods Phys. Res. Sect. A 458 544
[8]	Nakhostin M, Ishii K, Kikuchi Y, Matsuyama S, Yamazaki H and Torshabi A E 2009 Nucl. Instrum. Methods Phys. Res. Sect. A 606 681
[9]	Nakhostin M, Walker P M and Sellin P J 2010 Nucl. Instrum. Methods Phys. Res. Sect. A 621 506
[10]	LeBlanc J, Possin G E, Yanoff B D and Bogdanovich S 2003 IEEE Trans. Nucl. Sci. 50 1031
[11]	Bale D S, Soldner S A and Szeles C 2008 Appl. Phys. Lett. 92 82101
[12]	Xu Y, Jie W, Sellin P J, Wang T, Fu L, Zha G and Veeramani P 2009 IEEE Trans. Nucl. Sci. 56 2808
[13]	Zhao X C, Ouyang X P, Xu Y D, Han H T, Zhang Z C, Wang T, Zha G Q and Ouyang X 2012 AIP Adv. 2 12162
[14]	Guo R, Jie W, Wang N, Zha G, Xu Y, Wang T and Fu X 2015 J. Appl. Phys. 117 94502-1
[15]	Tiedje T 1984 Semiconductors and Semimetals, Vol. 21 (Academic Press) pp. 207-238
[16]	Shockley W and Read W T 1952 Phys. Rev. 87 835
[17]	Elhadidy H, Franc J, Moravec P, Höschl P and Fiederle M 2007 Semicond. Sci. Technol. 22 537
[18]	Zhou J and Shimizu T 1993 Solid State Commun. 88 173
[19]	Belas E, Hoschl P, Moravec P, Praus P, Franc J, Grill R and Kuba J 2011 Nucl. Instrum. Methods Phys. Res. A 633 100
[20]	Siffert P, Berger J, Scharager C, Cornet A, Stuck R, Nucleaires C D R, Serreze H B, Wald F V, Tyco M and Energy S 1976 IEEE Trans. Nucl. Sci. NS-23 159
[21]	Ottaviani G, Canali C, Jacoboni C, Quaranta A A and Zanio K 1973 J. Appl. Phys. 44 360
[22]	Carini G A, Bolotnikov A E, Camarda G S, Wright G W, James R B and Li L 2006 Appl. Phys. Lett. 88 143515
[23]	Iniewski K, Chen H, Bindley G, Kuvvetli I and Jorgensen C B 2007 IEEE Nucl. Sci. Symp. Conf. Rec. 4608

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