A theoretical and experimental evaluation of III-nitride solar-blind UV photocathode

doi:10.1088/1674-1056/26/8/088504

Abstract

We have developed a superior solar-blind ultraviolet (UV) photocathode with an Al_xGa_1-xN photocathode (x ～ 0.45) in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Before being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition (MOCVD), a reasonable design was made to the photocathode epitaxy structure, focusing on the Al_xGa_1-xN: Mg active layer, then followed by a comprehensive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.

Keywords: photocathode III-nitride solar-blind UV

Received: 10 February 2017
Revised: 14 April 2017
Accepted manuscript online:

PACS:	85.60.Ha	(Photomultipliers; phototubes and photocathodes)
	73.61.Ey	(III-V semiconductors)
	79.60.-i	(Photoemission and photoelectron spectra)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 10974015) and the National Defense Pre-Research Foundation of China (Grant No. 9140C380502150C38002).

Corresponding Authors: Bin Ren
E-mail: robinson_cv@163.com

About author: 0.1088/1674-1056/26/8/

Cite this article:

Bin Ren(任彬), Hui Guo(郭晖), Feng Shi(石峰), Hong-Chang Cheng(程宏昌), Hui Liu(刘晖), Jian Liu(刘健), Zhi-Hui Shen(申志辉), Yan-Li Shi(史衍丽), Pei Liu(刘培) A theoretical and experimental evaluation of III-nitride solar-blind UV photocathode 2017 Chin. Phys. B 26 088504

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A theoretical and experimental evaluation of III-nitride solar-blind UV photocathode

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