| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Switching mechanism for TiO2 memristor and quantitative analysis of exponential model parameters |
| Wang Xiao-Ping (王小平)a b, Chen Min (陈敏)a b, Shen Yi (沈轶)a b |
a School of Automation, Huazhong University of Science and Technology, Wuhan 430074, China;
b Key Laboratory of Ministry of Education for Image Processing and Intelligent Control, Huazhong University of Science and Technology, Wuhan 430074, China |
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Abstract The memristor, as the fourth basic circuit element, has drawn worldwide attention since its physical implementation was released by HP Labs in 2008. However, at the nano-scale, there are many difficulties for memristor physical realization. So a better understanding and analysis of a good model will help us to study the characteristics of a memristor. In this paper, we analyze a possible mechanism for the switching behavior of a memristor with a Pt/TiO2/Pt structure, and explain the changes of electronic barrier at the interface of Pt/TiO2. Then, a quantitative analysis about each parameter in the exponential model of memristor is conducted based on the calculation results. The analysis results are validated by simulation results. The efforts made in this paper will provide researchers with theoretical guidance on choosing appropriate values for (α, β, χ, γ) in this exponential model.
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Received: 17 November 2014
Revised: 02 March 2015
Accepted manuscript online:
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PACS:
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84.32.-y
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(Passive circuit components)
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85.35.-p
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(Nanoelectronic devices)
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03.65.-w
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(Quantum mechanics)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61374150 and 61374171), the State Key Program of the National Natural Science Foundation of China (Grant No. 61134012), the National Basic Research Program of China (Grant No. 2011CB710606), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2013TS126). |
Corresponding Authors:
Wang Xiao-Ping
E-mail: wangxiaoping@hust.edu.cn
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Cite this article:
Wang Xiao-Ping (王小平), Chen Min (陈敏), Shen Yi (沈轶) Switching mechanism for TiO2 memristor and quantitative analysis of exponential model parameters 2015 Chin. Phys. B 24 088401
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