Study of Nb/NbxSi1-x/Nb Josephson junction arrays

doi:10.1088/1674-1056/24/12/127402

Abstract Owing to the adjustable characteristics and superior etching properties of co-sputtered Nb_xSi_1-x film, we are trying to fabricate Nb/Nb_xSi_1-x/Nb Josephson junction arrays for voltage standard. It is important to find the suitable Nb_xSi_1-x barrier for the junctions. Josephson junctions with different barrier content are fabricated. Current-voltage characteristics are measured and analyzed. It is demonstrated in this paper that critical current can be adjusted by using different barrier content and thickness. Shapiro steps of five hundred junctions in series are observed.

Keywords: Josephson junctions critical current voltage standard

Received: 09 May 2015
Revised: 19 August 2015
Accepted manuscript online:

PACS:	74.81.Fa	(Josephson junction arrays and wire networks)
	74.25.Sv	(Critical currents)
	06.20.F-	(Units and standards)

Fund: Project supported by the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2011BAK15B00), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61401418), and the Basic Research Foundation of National Institute of Metrology of China (Grant No. 20-AKY1415).

Corresponding Authors: Cao Wen-Hui, Li Jin-Jin
E-mail: caowh@nim.ac.cn;jinjinli@nim.ac.cn

Cite this article:

Cao Wen-Hui (曹文会), Li Jin-Jin (李劲劲), Zhong Yuan (钟源), He Qing (贺青) Study of Nb/Nb_xSi_1-x/Nb Josephson junction arrays 2015 Chin. Phys. B 24 127402

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