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High-speed and broad optical bandwidth silicon modulator |
Xu Hao (徐浩), Li Xian-Yao (李显尧), Xiao Xi (肖希), Li Zhi-Yong (李智勇), Yu Yu-De (俞育德), Yu Jin-Zhong (余金中) |
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract A high-speed silicon modulator with broad optical bandwidth is proposed based on a symmetrically configured Mach–Zehnder interferometer. Careful phase bias control and traveling-wave design are used to improve the high-speed performance. Over a broadband wavelength range, high-speed operation up to 30 Gbit/s with a 4.5 dB–5.5 dB extinction ratio is experimentally demonstrated with a low driving voltage of 3 V.
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Received: 04 June 2013
Revised: 15 July 2013
Accepted manuscript online:
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PACS:
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42.82.-m
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(Integrated optics)
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42.79.Hp
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(Optical processors, correlators, and modulators)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2012AA012202), the National Basic Research Program of China (Grant No. 2011CB301701), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KGCX2-EW-102), and the National Natural Science Foundation of China (Grant Nos. 61107048 and 61275065). |
Corresponding Authors:
Yu Yu-De
E-mail: yudeyu@semi.ac.cn
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Cite this article:
Xu Hao (徐浩), Li Xian-Yao (李显尧), Xiao Xi (肖希), Li Zhi-Yong (李智勇), Yu Yu-De (俞育德), Yu Jin-Zhong (余金中) High-speed and broad optical bandwidth silicon modulator 2013 Chin. Phys. B 22 114212
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