The optimal thickness of transmission-mode GaN photocathode

doi:10.1088/1674-1056/21/8/087901

Abstract A 150-nm-thick GaN photocathode with an Mg doping concentration of 1.6× 10¹⁷cm^-3 is activated by Cs/O in ultrahigh vacuum chamber, and quantum efficiency (QE) curve of negative electron affinity transmission-mode (t-mode) GaN photocathode is obtained. The maximum QE reaches 13.0% at 290 nm. According to the t-mode QE equation solved from the diffusion equation, the QE curve is fitted. From the fitting results, the electron escape probability is 0.32, the back-interface recombination velocity is 5× 10⁴ cm·s^-1, and the electron diffusion length is 116 nm. Based on these parameters, the influence of GaN thickness on t-mode QE is simulated. The simulation shows that the optimal thickness of GaN is 90 nm, which is better than the 150-nm GaN.

Keywords: gallium nitride transmission-mode quantum efficiency optimal thickness

Received: 16 December 2011
Revised: 27 February 2012
Accepted manuscript online:

PACS:	79.60.-i	(Photoemission and photoelectron spectra)
	72.80.-r	(Conductivity of specific materials)
	73.20.-r	(Electron states at surfaces and interfaces)
	73.61.-r	(Electrical properties of specific thin films)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60871012), and the National Key Laboratory of Science and Technology Foundation on Low-Light-Level Night Vision, China (Grant No. J20110104), and the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions (Grant No. CXZZ11₀238).

Corresponding Authors: Chang Ben-Kang
E-mail: bkchang@njust.mail.edu.cn

Cite this article:

Wang Xiao-Hui (王晓晖), Shi Feng (石峰), Guo Hui (郭晖), Hu Cang-Lu (胡仓陆), Cheng Hong-Chang (程宏昌), Chang Ben-Kang (常本康), Ren Ling (任玲), Du Yu-Jie (杜玉杰), Zhang Jun-Ju (张俊举 ) The optimal thickness of transmission-mode GaN photocathode 2012 Chin. Phys. B 21 087901

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