A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

doi:10.1088/1674-1056/20/9/094206

Abstract A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm². The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12℃ to 96℃ and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.

Keywords: vertical-cavity surface-emitting laser strained quantum-well oxide confinement

Received: 14 February 2011
Revised: 22 April 2011
Accepted manuscript online:

PACS:	42.55.Px	(Semiconductor lasers; laser diodes)
	42.60.By	(Design of specific laser systems)
	42.72.Ai	(Infrared sources)

Cite this article:

Guan Bao-Lu(关宝璐), Ren Xiu-Juan(任秀娟), Li Chuan(李川), Li Shuo(李硕), Shi Guo-Zhu(史国柱), and Guo Xia(郭霞) A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser 2011 Chin. Phys. B 20 094206

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A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

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