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Chin. Phys. B, 2009, Vol. 18(9): 3980-3984    DOI: 10.1088/1674-1056/18/9/060
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures

Zhao Jian-Zhi(赵建芝)a), Lin Zhao-Jun(林兆军)a)†, Timothy D Corriganb), Zhang Yu(张宇)a), Lü Yuan-Jie(吕元杰)a), Lu Wu(鲁武)c), Wang Zhan-Guo(王占国)d), and Chen Hong(陈弘)e)
a  School of Physics, Shandong University, Jinan 250100, China; b  Department of Physics, University of Maryland, College Park, MD 20740, USA; c  Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210, USA; d Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  Using the measured capacitance--voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schr?dinger's and Poisson's equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to --3 V, the value of the relative permittivity decreases from 7.184 to 7.093.
Keywords:  relative permittivity      AlGaN barrier layer      AlGaN/GaN heterostructures  
Received:  21 December 2008      Revised:  11 April 2009      Accepted manuscript online: 
PACS:  77.22.Ch (Permittivity (dielectric function))  
  72.40.+w (Photoconduction and photovoltaic effects)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10774090) and the National Basic Research Program of China (Grant No 2007CB936602).

Cite this article: 

Zhao Jian-Zhi(赵建芝), Lin Zhao-Jun(林兆军), Timothy D Corrigan, Zhang Yu(张宇), Lü Yuan-Jie(吕元杰), Lu Wu(鲁武), Wang Zhan-Guo(王占国), and Chen Hong(陈弘) Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures 2009 Chin. Phys. B 18 3980

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