Controlling the electronic structure of SnO2 nanowires by Mo-doping

doi:10.1088/1674-1056/19/2/026102

Abstract Mo-doped SnO₂ (MTO) nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo doping, which implies that Mo ions do enter into the lattice of SnO₂ nanowire. Ultraviolet-visible diffuse reflectance spectra show that the band gap of MTO nanowires decreases with the increase of Mo concentration. The photoluminescence emission of SnO₂ nanowires around 580 nm at room temperature can also be controlled accurately by Mo-doping, and it is extremely sensitive to Mo ions and will disappear when the atomic ratio reaches 0.46%.

Keywords: doping nanostructures chemical vapor deposition processes semiconducting materials

Received: 20 February 2009
Revised: 18 June 2009
Accepted manuscript online:

PACS:	71.20.Nr	(Semiconductor compounds)
	61.72.up	(Other materials)
	78.30.Hv	(Other nonmetallic inorganics)
	78.40.Fy	(Semiconductors)
	78.55.Hx	(Other solid inorganic materials)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund: Project supported by the Major Research Plan of National Natural Science Foundation of China (Grant No. 90606010), the Program for New Century Excellent Talents in University, China (Grant No. NCET-07-0278), the Hunan Provincial Natural Science Fund, China (Grant No. 08JJ1001), and the Scientific Research Fund of Hunan Normal University, China (Grant No. 070623).

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Luo Zhi-Hua(罗志华), Tang Dong-Sheng(唐东升), Hai Kuo(海阔), Yu Fang(余芳), Chen Ya-Qi(陈亚奇), He Xiong-Wu(何熊武), Peng Yue-Hua(彭跃华), Yuan Hua-Jun(袁华军), and Yang Yi(羊亿) Controlling the electronic structure of SnO₂ nanowires by Mo-doping 2010 Chin. Phys. B 19 026102

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Controlling the electronic structure of SnO2 nanowires by Mo-doping

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Controlling the electronic structure of SnO₂ nanowires by Mo-doping