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Chin. Phys. B, 2009, Vol. 18(3): 1231-1236    DOI: 10.1088/1674-1056/18/3/065

An oxide filled extended trench gate super junction MOSFET structure

Wang Cai-Lin(王彩琳)a) and Sun Jun(孙军)a)b)
a Department of Electronics Engineering, Xi'an University of Technology, Xi'an 710048, China; b Technologies Corporation, CSMC, Wuxi 214061, China
Abstract  This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.
Keywords:  power MOSFET      super junction      trench gate      shallow angle implantation  
Received:  19 September 2008      Revised:  09 October 2008      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the Doctor Scientific Research Start-up Foundation of Xi'an University of Technology of China.

Cite this article: 

Wang Cai-Lin(王彩琳) and Sun Jun(孙军) An oxide filled extended trench gate super junction MOSFET structure 2009 Chin. Phys. B 18 1231

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