Influence of patterned TiO2/SiO2 dielectric multilayers for back and front mirror facetson GaN-based laser diodes
Chen Wei-Hua(陈伟华)a), Hu Xiao-Dong(胡晓东)a)$^†$, Dai Tao(代涛)a), Li Rui(李睿)a), Ye Xue-Min(叶学敏)b), Zhao Tai-Ping(赵太平)b), Du Wei-Min(杜为民)b), Yang Zhi-Jian(杨志坚)a), and Zhang Guo-Yi(张国义)a)
aState Key Laboratory for Mesoscopic Physics and Department of Physics, School of Physics, Peking University, Beijing 100871, China; bInstitute of Modern Optics, School of Physics, Peking University, Beijing 100871, China
Abstract Ridge InGaN multi-quantum-well-structure (MQW) edge-emitting laser diodes (LDs) were grown on (0001) sapphire substrates by low-pressure metal-organic chemical vapour deposition (MOCVD). The dielectric TiO$_{2}$/SiO$_{2}$ front and back facet coatings as cavity mirror facets of the LDs have been deposited with electron-beam evaporation method. The reflectivity of the designed front coating is about 50% and that of the back high reflective coating is as high as 99.9%. Under pulsed current injection at room temperature, the influences of the dielectric facets were discussed. The threshold current of the ridge GaN-based LDs was decreased after the deposition of the back high reflective dielectric mirrors and decreased again after the front facets were deposited. Above the threshold, the slope efficiency of the LDs with both reflective facets was larger than those with only back facets and without any reflective facets. It is important to design the reflectivity of the front facets for improving the performance of GaN-based LDs.
Received: 31 January 2008
Revised: 14 March 2008
Accepted manuscript online:
PACS:
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
Fund: Project supported by the National
High Technology Program of China (Grant No 2007AA03Z403), the
National Natural Science Foundation of China (Grant Nos 60776042 and
60477011), and National Basic Research Program of China (Grand No
2006CB921607).
Cite this article:
Chen Wei-Hua(陈伟华), Hu Xiao-Dong(胡晓东)$^†$, Dai Tao(代涛), Li Rui(李睿), Ye Xue-Min(叶学敏), Zhao Tai-Ping(赵太平), Du Wei-Min(杜为民), Yang Zhi-Jian(杨志坚), and Zhang Guo-Yi(张国义) Influence of patterned TiO2/SiO2 dielectric multilayers for back and front mirror facetson GaN-based laser diodes 2008 Chin. Phys. B 17 3363
Very low threshold operation of quantum cascade lasers Yan Fang-Liang (闫方亮), Zhang Jin-Chuan (张锦川), Yao Dan-Yang (姚丹阳), Liu Feng-Qi (刘峰奇), Wang Li-Jun (王利军), Liu Jun-Qi (刘峻岐), Wang Zhan-Guo (王占国). Chin. Phys. B, 2015, 24(2): 024212.
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