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Chin. Phys. B, 2008, Vol. 17(7): 2627-2632    DOI: 10.1088/1674-1056/17/7/046
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Power dissipation characteristics of great power and super high speed semiconductor switch

Liang Lin(梁琳), Yu Yue-Hui(余岳辉), and Peng Ya-Bin(彭亚斌)
Department of Electronic Science Technology, Huazhong University of Science Technology, Wuhan 430074, China
Abstract  The power dissipation characteristics of pulsed power switch reversely switched dynistors (RSDs) are investigated in this paper. According to the expressions of voltage on RSD, derived from the plasma bipolar drift model and the RLC circuit equations of RSD main loop, the simulation waveforms of current and voltage on RSD are acquired through iterative calculation by using the fourth order Runge--Kutta method, then the curve of transient power on RSD versus time is obtained. The result shows that the total dissipation on RSD is trivial compared with the pulse discharge energy and the commutation dissipation can be nearly ignored compared with the quasi-static dissipation. These characteristics can make the repetitive frequency of RSD increase largely. The experimental results prove the validity of simulation calculations. The influence factors on power dissipation are discussed. The power dissipation increases with the increase of the peak current and the n-base width and with the decrease of n-base doping concentration. In order to keep a low power dissipation, it is suggested that the n-base width should be smaller than 320$\mu $m when doping concentration is 1.0$\times $10$^{14}$cm$^{ - 3}$ while the doping concentration should be higher than 5.8$\times $10$^{13}$cm$^{ - 3}$ when n-base width is 270$\mu $m.
Keywords:  reversely switched dynistor (RSD)      pulsed power      switch      power dissipation  
Received:  12 December 2007      Revised:  08 January 2008      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  61.72.S- (Impurities in crystals)  
  84.30.Bv (Circuit theory)  
  84.32.Dd (Connectors, relays, and switches)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 50277016 and 50577028), and supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20050487044).

Cite this article: 

Liang Lin(梁琳), Yu Yue-Hui(余岳辉), and Peng Ya-Bin(彭亚斌) Power dissipation characteristics of great power and super high speed semiconductor switch 2008 Chin. Phys. B 17 2627

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