Please wait a minute...
Chin. Phys. B, 2008, Vol. 17(5): 1833-1839    DOI: 10.1088/1674-1056/17/5/047
CLASSICAL AREAS OF PHENOMENOLOGY Prev   Next  

Light propagation characteristics in quantum well structures of photonic crystals

Liu Jing(刘靖)a)b), Sun Jun-Qiang(孙军强)a), Huang Chong-Qing(黄重庆)b), Chen Min(陈敏)b), and Huang De-Xiu(黄德修)a)
a Wuhan National Laboratory for Optoelectronics, School of Optoelectronics Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China; Hunan Institute of Science and Technology, Department of Physics, Yueyang 414006, China
Abstract  Two-dimensional (2D) closed-cavity single quantum well (SQW) and multiple quantum well (MQW) structures are proposed based on the traditional 2D open-cavity SQW structures of photonic crystals. The numerical calculation results show that the proposed structures can greatly improve the optical characteristics compared with the traditional structures. It is found that the barrier thickness has a great impact on the optical characteristics of the closed-cavity MQW structures: when the barrier thickness is narrower, each resonant peak which appears in the SQW would split, the number of split times is just equal to the number of wells, and each well in the MQW structures is a travelling-wave-well, similar to the well in the open-cavity SQW structures; when the barrier thickness is wider, there is no effect of spectral splitting, and each well in the MQW structures is a standing-wave-well, just like the well in the closed-cavity SQW. The physical origin of different field distributions and the effect of the spectral splitting are provided.
Keywords:  multiple quantum well      single quantum well      light field distribution      spectral splitting  
Received:  28 May 2007      Revised:  18 September 2007      Accepted manuscript online: 
PACS:  78.67.De (Quantum wells)  
  42.70.Qs (Photonic bandgap materials)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 60577006 and 50774034) and the Hunan Provincial Science Foundation of China (Grant No 06JJ20005).

Cite this article: 

Liu Jing(刘靖), Sun Jun-Qiang(孙军强), Huang Chong-Qing(黄重庆), Chen Min(陈敏), and Huang De-Xiu(黄德修) Light propagation characteristics in quantum well structures of photonic crystals 2008 Chin. Phys. B 17 1833

[1] Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers
Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋). Chin. Phys. B, 2022, 31(7): 074206.
[2] Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer
Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Chin. Phys. B, 2022, 31(1): 017801.
[3] Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift
Ping Chen(陈平), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Wei Liu(刘炜), Feng Liang(梁锋), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群). Chin. Phys. B, 2020, 29(3): 034206.
[4] Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells
Chang-Fu Li(李长富), Kai-Ju Shi(时凯居), Ming-Sheng Xu(徐明升), Xian-Gang Xu(徐现刚), Zi-Wu Ji(冀子武). Chin. Phys. B, 2019, 28(10): 107803.
[5] Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction
Yangfeng Li(李阳锋), Yang Jiang(江洋), Junhui Die(迭俊珲), Caiwei Wang(王彩玮), Shen Yan(严珅), Haiyan Wu(吴海燕), Ziguang Ma(马紫光), Lu Wang(王禄), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Hong Chen(陈弘). Chin. Phys. B, 2018, 27(9): 097104.
[6] Shannon information entropies for rectangular multiple quantum well systems with constant total lengths
M Solaimani, Guo-Hua Sun(孙国华), Shi-Hai Dong(董世海). Chin. Phys. B, 2018, 27(4): 040301.
[7] Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells
Wei-Min Zheng(郑卫民), Wei-Yan Cong(丛伟艳), Su-Mei Li(李素梅), Ai-Fang Wang(王爱芳), Bin Li(李斌), Hai-Bei Huang(黄海北). Chin. Phys. B, 2018, 27(1): 017302.
[8] Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths
Xiang Li(李翔), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Feng Liang(梁锋), Jian-Ping Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同), Heng Long(龙衡), Mo Li(李沫). Chin. Phys. B, 2017, 26(1): 017805.
[9] Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications
Huang Jie (黄杰), Li Ming (黎明), Zhao Qian (赵倩), Gu Wen-Wen (顾雯雯), Lau Kei-May (刘纪美). Chin. Phys. B, 2015, 24(8): 087305.
[10] Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection
Zhao Yu-Kun (赵宇坤), Li Yu-Feng (李虞锋), Huang Ya-Ping (黄亚平), Wang Hong (王宏), Su Xi-Lin (苏喜林), Ding Wen (丁文), Yun Feng (云峰). Chin. Phys. B, 2015, 24(5): 056806.
[11] Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode
Liu Wei (刘炜), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Zhu Jian-Jun (朱建军), Li Xiang (李翔), Liang Feng (梁锋), Liu Jian-Ping (刘建平), Yang Hui (杨辉). Chin. Phys. B, 2015, 24(12): 127801.
[12] Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells
Liang Ming-Ming (梁明明), Weng Guo-En (翁国恩), Zhang Jiang-Yong (张江勇), Cai Xiao-Mei (蔡晓梅), Lü Xue-Qin (吕雪芹), Ying Lei-Ying (应磊莹), Zhang Bao-Ping (张保平). Chin. Phys. B, 2014, 23(5): 054211.
[13] Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature
He Chao (何超), Liu Zhi (刘智), Zhang Xu (张旭), Huang Wen-Qi (黄文奇), Xue Chun-Lai (薛春来), Cheng Bu-Wen (成步文). Chin. Phys. B, 2014, 23(11): 116103.
[14] Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template
Huang Cheng-Cheng (黄呈橙), Zhang Xia (张霞), Xu Fu-Jun (许福军), Xu Zheng-Yu (许正昱), Chen Guang (陈广), Yang Zhi-Jian (杨志坚), Tang Ning (唐宁), Wang Xin-Qiang (王新强), Shen Bo (沈波). Chin. Phys. B, 2014, 23(10): 106106.
[15] The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays
Wan Tu-Tu (万图图), Ye Zhan-Qi (叶展圻), Tao Tao (陶涛), Xie Zi-Li (谢自力), Zhang Rong (张荣), Liu Bin (刘斌), Xiu Xiang-Qian (修向前), Li Yi (李毅), Han Ping (韩平), Shi Yi (施毅), Zheng You-Dou (郑有炓). Chin. Phys. B, 2013, 22(8): 088102.
No Suggested Reading articles found!