Please wait a minute...
Chinese Physics, 2000, Vol. 9(5): 384-388    DOI: 10.1088/1009-1963/9/5/013
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

PHOTOLUMINESCENCE STUDY OF InAs/GaAs SELF-ORGANIZED QUANTUM DOTS WITH BIMODAL SIZE DISTRIBUTION

Guo Zhong-sheng (郭忠圣), Wang Hai-long (王海龙), Ning Dong (宁东), Feng Song-lin (封松林)
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  We have investigated the temperature dependence of the photoluminescence (PL) spectrum of self-organized InAs/GaAs quantum dots. A distinctive double-peak feature of the PL spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy image for uncapped sample. The power-dependent PL study demonstrates that the distinctive PL emission peaks are associated with the ground-state emission of islands in different size branches. The temperature-dependent PL study shows that the PL quenching temperature for different dot families is different. Due to lacking of the couple between quantum dots, an unusual temperature dependence of the linewidth and peak energy of the dot ensemble photoluminescence has not been observed. In addition, we have tuned the emission wavelength of InAs QDs to 1.3 μm at room temperature.
Received:  08 September 1999      Revised:  09 October 1999      Accepted manuscript online: 
PACS:  68.35.B- (Structure of clean surfaces (and surface reconstruction))  
  68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM))  
  78.55.Cr (III-V semiconductors)  
  78.67.Hc (Quantum dots)  
Fund: Project supported by the National Natural Science Foundation of China(Grant Nos. 69776016 and 19823001) and the State Key Program for Basic Research.

Cite this article: 

Guo Zhong-sheng (郭忠圣), Wang Hai-long (王海龙), Ning Dong (宁东), Feng Song-lin (封松林) PHOTOLUMINESCENCE STUDY OF InAs/GaAs SELF-ORGANIZED QUANTUM DOTS WITH BIMODAL SIZE DISTRIBUTION 2000 Chinese Physics 9 384

[1] Multiscale energy density algorithm and application to surface structure of Ni matrix of superalloy
Min Sun(孙敏), Chong-Yu Wang(王崇愚), Ji-Ping Liu(刘吉平). Chin. Phys. B, 2018, 27(9): 097105.
[2] Thermo-controllable self-assembled structures of single-layer 4, 4"-diamino-p-terphenyl molecules on Au (110)
Junhai Ren(任俊海), Deliang Bao(包德亮), Li Dong(董立), Lei Gao(高蕾), Rongting Wu(武荣庭), Linghao Yan(闫凌昊), Aiwei Wang(王爱伟), Jiahao Yan(严佳浩), Yeliang Wang(王业亮), Shixuan Du(杜世萱), Qing Huan(郇庆), Hongjun Gao(高鸿钧). Chin. Phys. B, 2017, 26(8): 086801.
[3] Femtosecond laser induced nanostructuring of zirconium in liquid confined environment
Nisar Ali, Shazia Bashir, Umm-i-Kalsoom, M. Shahid Rafique, Narjis Begum, Wolfgang Husinsky, Ali Ajami, Chandra S. R. Natahala. Chin. Phys. B, 2017, 26(1): 015204.
[4] Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas
Yan Zhao(赵艳), Wei Gao(高伟), Bo Xu(徐博), Ying-Ai Li(李英爱), Hong-Dong Li(李红东), Guang-Rui Gu(顾广瑞), Hong Yin(殷红). Chin. Phys. B, 2016, 25(10): 106801.
[5] Controllable synthesis of ultrathin vanadium oxide nanobelts via an EDTA-mediated hydrothermal process
Yu-Xiang Qin(秦玉香), Cheng Liu(刘成), Wei-Wei Xie(谢威威), Meng-Yang Cui(崔梦阳). Chin. Phys. B, 2016, 25(2): 027307.
[6] First-principles calculations on Si (220) located 6H-SiC (1010) surface with different stacking sites
He Xiao-Min (贺小敏), Chen Zhi-Ming (陈治明), Pu Hong-Bin (蒲红斌), Li Lian-Bi (李连碧), Huang Lei (黄磊). Chin. Phys. B, 2014, 23(10): 106802.
[7] Preparation and characterization of thick cubic boron nitride films
Wang Ming-E (王明娥), Ma Guo-Jia (马国佳), Dong Chuang (董闯), Gong Shui-Li (巩水利). Chin. Phys. B, 2014, 23(6): 066805.
[8] Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching
Wang Bo (王波), Su Shi-Chen (宿世臣), He Miao (何苗), Chen Hong (陈弘), Wu Wen-Bo (吴汶波), Zhang Wei-Wei (张伟伟), Wang Qiao (王巧), Chen Yu-Long (陈虞龙), Gao You (高优), Zhang Li (张力), Zhu Ke-Bao (朱克宝), Lei Yan (雷严). Chin. Phys. B, 2013, 22(10): 106802.
[9] Influences of surface effects and large deformation on the resonant properties of ultrathin silicon nanocantilevers
Zhang Jia-Hong(张加宏), Li Min(李敏), Gu Fang(顾芳), and Liu Qing-Quan(刘清惓) . Chin. Phys. B, 2012, 21(1): 016203.
[10] Surface reconstruction on stishovite SiO2, HfO2 and rutile TiO2 (001)
Tang Fu-Ling(汤富领), Yue Rui(岳瑞), and Lu Wen-Jiang(路文江). Chin. Phys. B, 2011, 20(2): 026801.
[11] STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface
Xu Mao-Jie(徐茂杰), Jeyanthinath Mayandi, Wang Xue-Sen(王学森), Jia Jin-Feng(贾金锋),Xue Qi-Kun(薛其坤), and Dou Xiao-Ming(窦晓鸣). Chin. Phys. B, 2010, 19(10): 106102.
[12] A new model for the formation of contact angle and contact angle hysteresis
Gong Mao-Gang(公茂刚), Liu Yuan-Yue(刘远越), and Xu Xiao-Liang(许小亮). Chin. Phys. B, 2010, 19(10): 106801.
[13] Deposition pressure effect on the surface roughness scaling of microcrystalline silicon films
Zhu Zhi-Li(朱志立), Ding Yan-Li(丁艳丽), Wang Zhi-Yong(王志永), Gu Jin-Hua(谷锦华), and Lu Jing-Xiao(卢景霄). Chin. Phys. B, 2010, 19(10): 106803.
[14] The etching of a-plane GaN epilayers grown by metal–organic chemical vapour deposition
Xu Sheng-Rui(许晟瑞), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Zhou Xiao-Wei(周小伟), Cao Yan-Rong(曹艳荣), Ou Xin-Xiu(欧新秀), Mao Wei(毛维), Du Da-Chao(杜大超), and Wang Hao(王昊). Chin. Phys. B, 2010, 19(10): 107204.
[15] GaP layers grown on GaN with and without buffer layers
Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Fan Guang-Han(范广涵), Zhang Yong(章勇), Zheng Shu-Wen(郑树文), and Su Jun(苏军). Chin. Phys. B, 2010, 19(10): 107206.
No Suggested Reading articles found!