Abstract We develop a Monte Carlo (MC) tool incorporated with the three-subband approximation model to investigate the in-plane spin-polarized transport in GaAs/GaAlAs quantum well. Using the tool, the effects of the electron occupation of higher subbands and the intersubband scattering on the spin dephasing have been studied. Compared with the corresponding results of the simple one-subband approximation model, the spin dephasing length is reduced four times under 0.125\,kV/cm of driving electric field at 300K by the MC tool incorporated with the three-subband approximation model, indicating that the three-subband approximation model predicts significantly shorter spin dephasing length with temperature increasing. Our simulation results suggest that the effects of the electron occupation of higher subbands and the intersubband scattering on the spin-dependent transport of GaAs 2-dimensional electron gas need to be considered when the driving electric field exceeds the moderate value and the lattice temperature is above 100K. The simulation by using the MC tool incorporated with the three-subband approximation model also indicates that, under a certain driving electric field and lattice temperature, larger channel widths cause spins to be depolarized faster. Ranges of the three components of the spins are different for three different injected spin polarizations due to the anisotropy of spin--orbit interaction.
Received: 17 October 2005
Revised: 10 November 2005
Accepted manuscript online:
Fund: Project supported in part by the National Natural Science Foundation of China (Grant Nos 90307006 and 10234010), and the Research Fund for the Datoral Program of Higher Education of China (Grant Nos 20040001026 and 20020001018).
Cite this article:
Kong Ling-Gang (孔令刚), Liu Xiao-Yan (刘晓彦), Du Gang (杜刚), Wang Yi (王漪), Kang Jin-Feng (康晋锋), Han Ru-Qi (韩汝琦) Monte Carlo simulation of in-plane spin-polarized transport in GaAs/GaAlAs quantum well in the three-subband approximation 2006 Chinese Physics 15 654
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