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Chinese Physics, 2005, Vol. 14(3): 583-585    DOI: 10.1088/1009-1963/14/3/028
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

6H-SiC Schottky barrier source/drain NMOSFET with field-induced source/drain extension

Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠)
Microelectronics Institute, Xidian University, Xi'an 710071, China
Abstract  A novel SiC Schottky barrier source/drain NMOSFET (SiC SBSD-NMOSFET) with field-induced source/drain (FISD) extension is proposed and demonstrated by numerical simulation for the first time. In the new device the FISD extension is induced by a metal field-plate lying on top of the passivation oxide, and the width of Schottky barrier is controlled by the metal field-plate. The new structure not only eliminates the effect of the sidewalls but also significantly improves the on-state current. Moreover, the performance of the present device exhibits very weak dependence on the widths of sidewalls.
Keywords:  SBSD-MOSFET      FISD      sidewall      6H-SiC  
Received:  20 May 2004      Revised:  04 November 2004      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Hi (Surface barrier, boundary, and point contact devices)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60476007).

Cite this article: 

Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠) 6H-SiC Schottky barrier source/drain NMOSFET with field-induced source/drain extension 2005 Chinese Physics 14 583

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