Influence of the deposition parameters on the transition region of hydrogenated silicon films growth
Lei Qing-Song (雷青松)a, Wu Zhi-Meng (吴志猛)a, Geng Xin-Hua (耿新华)b, Zhao Ying (赵颖)b, Xi Jian-Ping (奚建平)a
a Institute of Micro and Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China; b Institute of Photo-Electronics, Nankai University, Tianjin 300071, China
Abstract Hydrogenated microcrystalline and amorphous silicon thin films were prepared by very high frequency plasma-enhanced chemical vapour deposition (VHF PECVD) by using a mixture of silane and hydrogen as source gas. The influence of deposition parameters on the transition region of hydrogenated silicon films growth was investigated by varying the silane concentration (SC), plasma power (Pw), working pressure (P), and substrate temperature (Ts). Results suggest that SC and Ts are the most critical factors that affect the film structure transition from microcrystalline to amorphous phase. A narrow region in the range of SC and Ts, in which the rapid phase transition takes place, was identified. It was found that at lower P or higher Pw, the transition region is shifted to larger SC. In addition, the dark conductivity and photoconductivity decrease with SC and show sharp changes in the transition region. It proposed that the transition process and the transition region are determined by the competition between the etching effect of atomic hydrogen and the growth of amorphous phase.
Received: 10 March 2005
Revised: 27 April 2005
Accepted manuscript online:
Fund: Project supported by the National Key Basic Project of China (Grant Nos G2000028202 and G2000028203).
Cite this article:
Lei Qing-Song (雷青松), Wu Zhi-Meng (吴志猛), Geng Xin-Hua (耿新华), Zhao Ying (赵颖), Xi Jian-Ping (奚建平) Influence of the deposition parameters on the transition region of hydrogenated silicon films growth 2005 Chinese Physics 14 2342
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