a College of Physics Science and Technology, Hebei University, Baoding 071002, China; b Natural Science Foundation of Hebei Province, Shijiazhuang 050021, China
Abstract The behaviour of electrons during electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron energy distribution and velocity distribution are obtained over a wide range of reduced field E/N (the ratio of the electric field to gas molecule density) from 100 to 2000 in units of 1Td = 10-17Vcm2. Their effects on the diamond growth are also discussed. The main results obtained are as follows. (1) The velocity profile is asymmetric for the component parallel to the field. The velocity distribution has a peak shift in the field direction. Most electrons possess non-zero velocity parallel to the substrate. (2) The number of atomic H is a function of E/N. (3) High-quality diamond can be obtained under the condition of E/N from 50 to 800Td due to sufficient atomic H and electron bombardment.
Received: 23 September 2001
Revised: 14 January 2002
Accepted manuscript online:
Fund: Project supported by the Natural Science Foundation of Hebei Province, China (Grant No 502121).
Cite this article:
Dong Li-Fang (董丽芳), Chen Jun-Ying (陈俊英), Dong Guo-Yi (董国义), Shang Yong (尚勇) Monte Carlo simulation of the behaviour of electrons during electron-assisted chemical vapour deposition of diamond 2002 Chinese Physics 11 419
Multiple scattering and modeling of laser in fog Ji-Yu Xue(薛积禹), Yun-Hua Cao(曹运华), Zhen-Sen Wu(吴振森), Jie Chen(陈杰), Yan-Hui Li(李艳辉), Geng Zhang(张耿), Kai Yang(杨凯), and Ruo-Ting Gao(高若婷). Chin. Phys. B, 2021, 30(6): 064206.
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