a Department of Physics and State Key Laboratory of Solid State Microstructurs, Nanjing University, Nanjing 210008, China; b Department of Electronical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
Abstract A series of hydrogenated amorphous silicon-germanium alloys have been fabricated by high hydrogen dilution method. The Ge content in the film increasea from 0.4 to 0.8 and the corresponding optical bandgap is in the range of 1.48-1.22eV. The photoconductivity is 3.6×10-6 S/cm and photosensitivity is as high as 7.3×103 at an optical bandgap of 1.48eV. The deterioration of photoelectric properties with increasing Ge content could be attributed to the decrease of the bonded hydrogen content and the inhomogeneous structure in the alloy network.
Received: 03 January 1996
Accepted manuscript online:
Study on stability of hydrogenated amorphous silicon films Zhu Xiu-Hong (朱秀红), Chen Guang-Hua (陈光华), Zhang Wen-Li (张文理), Ding Yi (丁毅), Ma Zhan-Jie (马占洁), Hu Yue-Hui (胡跃辉), He Bin (何斌), Rong Yan-Dong (荣延栋). Chin. Phys. B, 2005, 14(11): 2348-2351.
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