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Acta Physica Sinica (Overseas Edition), 1994, Vol. 3(9): 697-701    DOI: 10.1088/1004-423X/3/9/007
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

THERMALLY ACTIVATED HOPPING IN Dy1-xPrxBa2Cu3O7-$\delta$ SYSTEM

CAO XIAO-WEN (曹效文)
Institute of Plasma Physics, Academia Sinica, Hefei 230031, China
Abstract  The temperature dependence of resistivity in Dy1-xPrxBa2Cu3O7-$\delta$ system with x>0.6 was measured. The experimental results show that Pr substitution leads to the localization of mobile holes and such a localization is enhanced with increasing Pr concentration. The gradually enhancing of localization induces Anderson transitions one by one in this system, including the transition from the conduction by excitation of holes to the one by thermal activation hopping between localized states, the so called Anderson transition type-I, and the transition from nearest neighbor hopping (NNH) to variable range hopping (VRH), the Anderson transition type-II, and the Anderson transition type-lI from 3D to 2D.
Received:  18 September 1993      Accepted manuscript online: 
PACS:  74.25.Fy  
  74.72.Jt  
  74.25.Jb (Electronic structure (photoemission, etc.))  
  73.20.Fz (Weak or Anderson localization)  

Cite this article: 

CAO XIAO-WEN (曹效文) THERMALLY ACTIVATED HOPPING IN Dy1-xPrxBa2Cu3O7-$\delta$ SYSTEM 1994 Acta Physica Sinica (Overseas Edition) 3 697

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