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Chin. Phys. B, 2010, Vol. 19(6): 067401    DOI: 10.1088/1674-1056/19/6/067401
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Phase escape of current-biased Josephson junctions

Cao Wen-Hui(曹文会), Yu Hai-Feng(于海峰), Tian Ye(田野), Chen Geng-Hua(陈赓华), and Zhao Shi-Ping(赵士平)
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  Switching current distributions of an Nb/Al--AlOx/Nb Josephson junction are measured in a temperature range from 25 mK to 800 mK. We analyse the phase escape properties by using the theory of Larkin and Ovchinnikov (LO) which takes discrete energy levels into account. Our results show that the phase escape can be well described by the LO approach for temperatures near and below the crossover from thermal activation to macroscopic quantum tunneling. These results are helpful for further study of macroscopic quantum phenomena in Josephson junctions where discrete energy levels need to be considered.
Keywords:  Nb junctions      phase escapes      macroscopic quantum phenomena      discrete energy levels  
Received:  25 November 2009      Accepted manuscript online: 
PACS:  74.50.+r (Tunneling phenomena; Josephson effects)  
  74.25.Fy  
  74.20.-z (Theories and models of superconducting state)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.~10534060 and 10874231) and National Basic Research Program of China (Grant Nos.~2006CB601007, 2006CB921107, and 2009CB929102).

Cite this article: 

Cao Wen-Hui(曹文会), Yu Hai-Feng(于海峰), Tian Ye(田野), Chen Geng-Hua(陈赓华), and Zhao Shi-Ping(赵士平) Phase escape of current-biased Josephson junctions 2010 Chin. Phys. B 19 067401

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[1] Nb/Al-AlOx/Nb junctions with controllable critical current density for qubit application
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[2] Fabrication of high-quality submicron Nb/Al--AlOx/Nb tunnel junctions
Yu Hai-Feng(于海峰), Cao Wen-Hui(曹文会), Zhu Xiao-Bo(朱晓波), Yang Hai-Fang(杨海方), Yu Hong-Wei(于洪伟), Ren Yu-Feng (任育峰), Gu Chang-Zhi(顾长志), Chen Geng-Hua(陈赓华), and Zhao Shi-Ping(赵士平). Chin. Phys. B, 2008, 17(8): 3083-3086.
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