Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source

doi:10.1088/1674-1056/ab5efb

Abstract Neutron radiation experiments of optocouplers at back-streaming white neutrons (back-n) in China Spallation Neutron Source (CSNS) are presented. The displacement damages induced by neutron radiation are analyzed. The performance degradations of two types of optocouplers are compared. The degradations of current transfer ratio (CTR) are analyzed, and the mechanisms induced by radiation are also demonstrated. With the increase of the accumulated fluence, the CTR is degrading linearly with neutron fluence. The radiation hardening of optocouplers can be improved when the forward current is increased. Other parameters related to CTR degradation of optocouplers are also analyzed.

Keywords: China Spallation Neutron Source optocoupler neutron radiation displacement damage current transfer ratio

Received: 07 July 2019
Revised: 23 October 2019
Accepted manuscript online:

PACS:	42.88.+h	(Environmental and radiation effects on optical elements, devices, and systems)
	61.80.Hg	(Neutron radiation effects)
	52.59.-f	(Intense particle beams and radiation sources)
	61.80.-x	(Physical radiation effects, radiation damage)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11875223, 11805155, and 11690043), the Chinese Academy of Sciences Strategic Pilot Science and Technology Project (Grant No. XDA15015000), the Innovation Foundation of Radiation Application, China (Grant No. KFZC2018040201), and the Foundation of State Key Laboratory of China (Grant Nos. SKLIPR1803 and 1903Z).

Corresponding Authors: Zu-Jun Wang
E-mail: wangzujun@nint.ac.cn

Cite this article:

Rui Xu(徐瑞), Zu-Jun Wang(王祖军), Yuan-Yuan Xue(薛院院), Hao Ning(宁浩), Min-Bo Liu(刘敏波), Xiao-Qiang Guo(郭晓强), Zhi-Bin Yao(姚志斌), Jiang-Kun Sheng(盛江坤), Wu-Ying Ma(马武英), Guan-Tao Dong(董观涛) Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source 2020 Chin. Phys. B 29 014210

[1]	Rax B G, Lee C I, Johnston A H and Barnes C E 1996 IEEE Trans. Nucl. Sci. 43 3167
[2]	Johnston A H and Rax B G 2000 IEEE Trans. Nucl. Sci. 47 675
[3]	Gerelick J L and Ladbury R 2004 IEEE Trans. Nucl. Sci. 51 3730
[4]	Johnston A H, Harries R D and Miyahira T F 2009 IEEE Trans. Nucl. Sci. 56 3310
[5]	Irom F, Edmonds L D, Allen G R and Rax B G 2018 IEEE Trans. Nucl. Sci. 65 1553
[6]	Miyahira T F and Johnston A H 2002 IEEE Trans. Nucl. Sci. 49 2868
[7]	Wang Z J, Xue Y Y, Chen W, Ning H, Xu R, Guo X Q, Sheng J K, Yao Z B, He B P, Ma W Y and Dong G T 2019 Nucl. Instrum. Methods A 920 68
[8]	Tan Z X, Tang J Y, Jing H T, Fan R R, Li Q, Ning C J, Bao J, Ruan X C, Luan G Y, Feng C Q and Zhang X P 2018 Nucl. Instrum. Methods A 889 122
[9]	Jin X M, Liu Y, Su C L, Chen W, Wang C H, Yang S C and Guo X Q 2019 Nucl. Sci. Tech. 30 143
[10]	Johnston A H and Miyahira T F 2000 IEEE Trans. Nucl. Sci. 47 2500

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[2]	First neutron Bragg-edge imaging experimental results at CSNS Jie Chen(陈洁), Zhijian Tan(谭志坚), Weiqiang Liu(刘玮强), Sihao Deng(邓司浩), Shengxiang Wang(王声翔), Liyi Wang(王立毅), Haibiao Zheng(郑海彪), Huaile Lu(卢怀乐), Feiran Shen(沈斐然), Jiazheng Hao(郝嘉政), Xiaojuan Zhou(周晓娟), Jianrong Zhou(周健荣), Zhijia Sun(孙志嘉), Lunhua He(何伦华), and Tianjiao Liang(梁天骄). Chin. Phys. B, 2021, 30(9): 096106.
[3]	Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons Yan Liu(刘岩), Wei Chen(陈伟), Chaohui He(贺朝会), Chunlei Su(苏春垒), Chenhui Wang(王晨辉), Xiaoming Jin(金晓明), Junlin Li(李俊霖), Yuanyuan Xue(薛院院). Chin. Phys. B, 2019, 28(6): 067302.
[4]	Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yinhong Luo(罗尹虹), Fengqi Zhang(张凤祁), Lili Ding(丁李利). Chin. Phys. B, 2018, 27(3): 038501.
[5]	Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yin-Hong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Li-Li Ding(丁李利), Jia-Nan Wei(魏佳男), Wen Zhao(赵雯). Chin. Phys. B, 2017, 26(1): 018501.
[6]	Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘). Chin. Phys. B, 2014, 23(11): 116104.
[7]	Effect of bias condition on heavy ion radiation in bipolar junction transistor Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Yang De-Zhuang (杨德庄), He Shi-Yu (何世禹 ). Chin. Phys. B, 2012, 21(8): 080703.
[8]	Incident particle range dependence of radiation damage in a power bipolar junction transistor Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Rui Er-Ming (芮二明), Guo Li-Xin (郭立新), Yang Jian-Qun (杨剑群). Chin. Phys. B, 2012, 21(10): 104211.
[9]	Degradation mechanisms of current gain in NPN transistors Li Xing-Ji(李兴冀), Geng Hong-Bin(耿洪滨), Lan Mu-Jie(兰慕杰), Yang De-Zhuang(杨德庄), He Shi-Yu(何世禹), and Liu Chao-Ming(刘超铭). Chin. Phys. B, 2010, 19(6): 066103.
[10]	Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons Li Xing-Ji(李兴冀), Geng Hong-Bin(耿洪滨), Lan Mu-Jie(兰慕杰), Yang De-Zhuang(杨德庄), He Shi-Yu(何世禹), and Liu Chao-Ming(刘超铭). Chin. Phys. B, 2010, 19(5): 056103.
[11]	Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation Xue Shou-Bin(薛守斌), Huang Ru(黄如), Huang De-Tao(黄德涛), Wang Si-Hao(王思浩), Tan Fei(谭斐), Wang Jian(王健), An Xia (安霞), and Zhang Xing(张兴). Chin. Phys. B, 2010, 19(11): 117307.
[12]	Effects of electron radiation on shielded space and triple-junction GaAs solar cells Gao Xin(高欣), Yang Sheng-Sheng(杨生胜), Xue Yu-Xiong(薛玉雄), Li Kai(李凯), Li Dan-Ming(李丹明), Wang Yi(王鹢), Wang Yun-Fei(王云飞), and Feng Zhan-Zu(冯展祖). Chin. Phys. B, 2009, 18(11): 5015-5019.

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Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source

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