Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (6): 060701    DOI: 10.1088/1674-1056/28/6/060701
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Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance
Kang Liu(刘康)1, Jiwen Zhao(赵继文)2, Huarui Sun(孙华锐)1, Huaixin Guo(郭怀新)3, Bing Dai(代兵)2, Jiaqi Zhu(朱嘉琦)2
1 Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen 518055, China;
2 Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150080, China;
3 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, Chin

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