Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (9): 098506    DOI: 10.1088/1674-1056/26/9/098506
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Performance of dual-band short- or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices
Yao-yao Sun(孙姚耀)1,2,3, Yue-xi Lv(吕粤希)1,2,3, Xi Han(韩玺)1,2,3, Chun-yan Guo(郭春妍)1,2,3, Zhi Jiang(蒋志)1,2,3, Hong-yue Hao(郝宏玥)1,2,3, Dong-wei Jiang(蒋洞微)1,2,3, Guo-wei Wang(王国伟)1,2,3, Ying-qiang Xu(徐应强)1,2,3, Zhi-chuan Niu(牛智川)1,2,3
1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China

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