Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (2): 027305    DOI: 10.1088/1674-1056/26/2/027305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Ballistic transport and quantum interference in InSb nanowire devices
Sen Li(李森)1, Guang-Yao Huang(黄光耀)1, Jing-Kun Guo(郭景琨)1, Ning Kang(康宁)1, Philippe Caroff2,3, Hong-Qi Xu(徐洪起)1
1 Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China;
2 Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia;
3 Institute of Electronics Microelectronics and Nanotechnology, CNRS-UMR 8520, Avenue Poincaré, C. S. 60069, 59652 Villeneuve d'Ascq, France

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