| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Ballistic transport and quantum interference in InSb nanowire devices |
| Sen Li(李森)1, Guang-Yao Huang(黄光耀)1, Jing-Kun Guo(郭景琨)1, Ning Kang(康宁)1, Philippe Caroff2,3, Hong-Qi Xu(徐洪起)1 |
1 Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China;
2 Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia;
3 Institute of Electronics Microelectronics and Nanotechnology, CNRS-UMR 8520, Avenue Poincaré, C. S. 60069, 59652 Villeneuve d'Ascq, France |
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Abstract An experimental realization of a ballistic superconductor proximitized semiconductor nanowire device is a necessary step towards engineering topological quantum electronics. Here, we report on ballistic transport in InSb nanowires grown by molecular-beam epitaxy contacted by superconductor electrodes. At an elevated temperature, clear conductance plateaus are observed at zero magnetic field and in agreement with calculations based on the Landauer formula. At lower temperature, we have observed characteristic Fabry-Pérot patterns which confirm the ballistic nature of charge transport. Furthermore, the magnetoconductance measurements in the ballistic regime reveal a periodic variation related to the Fabry-Pérot oscillations. The result can be reasonably explained by taking into account the impact of magnetic field on the phase of ballistic electron's wave function, which is further verified by our simulation. Our results pave the way for better understanding of the quantum interference effects on the transport properties of InSb nanowires in the ballistic regime as well as developing of novel device for topological quantum computations.
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Received: 13 December 2016
Revised: 19 December 2016
Accepted manuscript online:
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PACS:
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73.23.-b
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(Electronic transport in mesoscopic systems)
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73.23.Ad
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(Ballistic transport)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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73.63.Nm
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(Quantum wires)
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| Fund: Project supported by the National Key Basic Research and Development Project of the Ministry of Science and Technology of China (Grant No. 2016YFA0300601) and the National Natural Science Foundation of China (Grant Nos. 91221202, 91421303, 11374019, and 61321001). |
Corresponding Authors:
Ning Kang, Hong-Qi Xu
E-mail: nkang@pku.edu.cn;hqxu@pku.edu.cn
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Cite this article:
Sen Li(李森), Guang-Yao Huang(黄光耀), Jing-Kun Guo(郭景琨), Ning Kang(康宁), Philippe Caroff, Hong-Qi Xu(徐洪起) Ballistic transport and quantum interference in InSb nanowire devices 2017 Chin. Phys. B 26 027305
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