Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells

doi:10.1088/1674-1056/25/5/054208

Abstract

We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al_0.3 Ga_0.7As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.

Keywords: optical bistability optical multistability quantum well nanostructure

Received: 25 October 2015
Revised: 06 December 2015
Accepted manuscript online:

PACS:	42.50.-p	(Quantum optics)
	42.65.Pc	(Optical bistability, multistability, and switching, including local field effects)

Corresponding Authors: Seyyed Hossein Asadpour
E-mail: S.Hosein.Asadpour@gmail.com

Cite this article:

Seyyed Hossein Asadpour, G Solookinejad, M Panahi, E Ahmadi Sangachin Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells 2016 Chin. Phys. B 25 054208

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Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells

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