Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector

doi:10.1088/1674-1056/23/10/104209

Abstract A resonant cavity-enhanced (RCE) quantum dot (QD) field-effect transistor (RCEQDFET) is designed for single-photon detection in this paper. Adding distributed Bragg reflection (DBR) mirrors to the single-photon detector (SPD), we improve the light absorption efficiency of the SPD. The effects of the reflectivity of the mirrors, the thickness and light absorption coefficient of the absorbing layer on the detector's light absorption efficiency are investigated, and the resonant cavity is determined by using the air/semiconductor interface as the mirror on the top. Through analyzing the relationship between the refractive index of Al_xGa_1-xAs and Al component, we choose AlAs/Al_0.15Ga_0.85As as the material of the mirror on the bottom. The pairs of AlAs/Al_0.15Ga_0.85As film are further determined to be 21 by calculating the reflectivity of the mirror. The detector is fabricated from semiconductor heterostructures grown by molecular beam epitaxy. The reflection spectrum, photoluminescence (PL) spectrum, photocurrent response, and channel current of the detector are tested and the results show that the RCEQDFET-SPD designed in this paper has better performances in photonic response and wavelength selection.

Keywords: single-photon detector quantum dot field-effect transistor resonant cavity enhanced

Received: 01 November 2013
Revised: 10 February 2014
Accepted manuscript online:

PACS:	42.60.Da	(Resonators, cavities, amplifiers, arrays, and rings)
	85.30.Tv	(Field effect devices)
	85.60.Gz	(Photodetectors (including infrared and CCD detectors))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61274125) and the Natural Science Foundation of Beijing, China (Grant No. 11DB1262).

Corresponding Authors: Dong Yu
E-mail: jushangzhilei@foxmail.com

About author: 42.60.Da; 85.30.Tv; 85.60.Gz

Cite this article:

Dong Yu (董宇), Wang Guang-Long (王广龙), Wang Hong-Pei (王红培), Ni Hai-Qiao (倪海桥), Chen Jian-Hui (陈建辉), Gao Feng-Qi (高凤岐), Qiao Zhong-Tao (乔中涛), Yang Xiao-Hong (杨晓红), Niu Zhi-Chuan (牛智川) Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector 2014 Chin. Phys. B 23 104209


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Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector

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