High-power terahertz pulse sensor with overmoded structure

doi:10.1088/1674-1056/23/5/058701

Abstract Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investigated. The distribution of electromagnetic field components, voltage standing wave ratio (VSWR), and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain (FDTD) method. By adjusting several factors (such as the length, width, height and specific resistance of the silicon block) a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW^-1, with a fluctuation of relative sensitivity of no more than ± 22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band.

Keywords: hot electron effect high power terahertz pulse overmoded structure

Received: 23 September 2013
Revised: 22 October 2013
Accepted manuscript online:

PACS:

87.50.U-

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61231003).

Corresponding Authors: Wang Jian-Guo
E-mail: wanguiuc@mail.xjtu.edu.cn

About author: 87.50.U-

Cite this article:

Wang Xue-Feng (王雪锋), Wang Jian-Guo (王建国), Wang Guang-Qiang (王光强), Li Shuang (李爽), Xiong Zheng-Feng (熊正锋) High-power terahertz pulse sensor with overmoded structure 2014 Chin. Phys. B 23 058701

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High-power terahertz pulse sensor with overmoded structure

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