Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

doi:10.1088/1674-1056/23/4/046104

Abstract The single event effect in ferroelectric-gate field-effect transistor (FeFET) under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor (MOSFET) when the ion strikes the channel. The main reason is that the polarization-induced charges (the polarization direction here is away from the silicon surface) bring a negative surface potential which will affect the distribution of carriers and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.

Keywords: single event effect heavy ion irradiation charge collection ferroelectric memory FeFET

Received: 03 June 2013
Revised: 22 September 2013
Accepted manuscript online:

PACS:	61.80.Lj	(Atom and molecule irradiation effects)
	61.80.Jh	(Ion radiation effects)
	61.80.Az	(Theory and models of radiation effects)
	85.50.Gk	(Non-volatile ferroelectric memories)

Fund: Project supported by the KeyProject of the National Natural Science Foundation of China (Grant No. 11032010), the National Natural Science Foundation of China (Grant Nos. 51072171, 61274107, 61176093, and 11275163), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT1080), the 973 Program, China (Grant No. 2012CB326404), the KeyProject of Natural Science Foundation of Hunan Province, China (Grant No. 13JJ2023), the KeyProject of Scientific Research Fund of Education Department of Hunan Province, China (Grant No. 12A129), the Innovation Foundation of Hunan Province of China for Postgraduate, China (Grant No. CX2013B261), the Doctoral Program of Higher Education of China (Grant No. 20104301110001), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.

Corresponding Authors: Yan Shao-An, Tang Ming-Hua
E-mail: yanshaoan@126.com;mhtang@xtu.edu.cn

About author: 61.80.Lj; 61.80.Jh; 61.80.Az; 85.50.Gk

Cite this article:

Yan Shao-An (燕少安), Tang Ming-Hua (唐明华), Zhao Wen (赵雯), Guo Hong-Xia (郭红霞), Zhang Wan-Li (张万里), Xu Xin-Yu (徐新宇), Wang Xu-Dong (王旭东), Ding Hao (丁浩), Chen Jian-Wei (陈建伟), Li Zheng (李正), Zhou Yi-Chun (周益春) Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation 2014 Chin. Phys. B 23 046104

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Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

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