Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO2 dielectric

doi:10.1088/1674-1056/22/11/117701

Abstract Gd-doped HfO₂ has drawn worldwide interest for its interesting features. It is considered to be a suitable material for N-type metal-oxide-semiconductor (MOS) devices due to a negative flatband voltage (V_fb) shift caused by the Gd doping. In this work, an anomalous positive shift was observed when Gd was doped into HfO₂. The cause for such a phenomenon was systematically investigated by distinguishing the effects of different factors, such as Fermi level pinning (FLP), a dipole at the dielectric/SiO₂ interface, fixed interfacial charge, and bulk charge, on V_fb. It was found that the FLP and interfacial dipole could make V_fb negatively shifted, which is in agreement with the conventional dipole theory. The increase in interfacial fixed charge resulting from Gd doping plays a major role in positive V_fb shift.

Keywords: high-k dielectric HfGdO_x interface dipole flatband voltage shift

Received: 29 March 2013
Revised: 31 May 2013
Accepted manuscript online:

PACS:	77.55.D-
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2009ZX02035) and the National Natural Science of China (Grant Nos. 61176091 and 50932001).

Corresponding Authors: Han Kai
E-mail: hankai@ime.ac.cn

Cite this article:

Han Kai (韩锴), Wang Xiao-Lei (王晓磊), Yang Hong (杨红), Wang Wen-Wu (王文武) Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO₂ dielectric 2013 Chin. Phys. B 22 117701

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Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO2 dielectric

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Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO₂ dielectric